High-performance antimonide p-MOSFETs and their hetero-integration on silicon
Abstract/Contents
- Abstract
- As the benefits from scaling conventional silicon transistors start to saturate, newer structures such as gate-all-around or nanowire devices and alternate high-mobility channel materials such as III-V compound semiconductors can provide a much-needed boost to transistor performance. Antimonides are a promising group of III-V compound semiconductors being actively researched for high-speed low-power digital CMOS as well as for THz/mm wave device applications. They have the highest electron and hole mobility among all III-Vs and could potentially enable an all-antimonide CMOS solution. Antimonides are also the only viable candidate for a high-performance III-V p-MOSFET. This thesis first addresses the most critical challenge of III-V technology -- hetero-integration on a silicon substrate. The rapid-melt-growth (RMG) technique for the hetero-integration of GaSb on silicon is studied in detail, focusing on understanding the impact of film stoichiometry, purity and morphology. A low-temperature molecular beam epitaxy (MBE) process is developed to obtain pure, amorphous GaSb which is then melt-regrown into scaled high-quality single-crystal fins down to 130nm fin width. GaSb-on-insulator p-MOSFETs are successfully demonstrated and factors limiting device performance are identified. In parallel, quantum-well heterostructures were grown by the more established technique of metamorphic buffer growth to obtain high-performance InGaSb p-MOSFETs. Two different device structures are compared -- a buried channel structure and a surface channel structure. Scaled devices with ~100 nm gate length metal gate/high-κ dielectric and self-aligned Ni-alloy metal source/drain are demonstrated. Finally, the first set of studies to investigate the radiation response of antimonide p-MOSFETs for potential use in harsh environments such as space and defense applications is conducted. Laser and heavy-ion irradiation testing is performed and supported with simulations to understand the basic mechanisms of single-event-effects in these heterostructure antimonide p-MOSFETs.
Description
| Type of resource | text |
|---|---|
| Form | electronic resource; remote; computer; online resource |
| Extent | 1 online resource. |
| Place | California |
| Place | [Stanford, California] |
| Publisher | [Stanford University] |
| Copyright date | 2018; ©2018 |
| Publication date | 2018; 2018 |
| Issuance | monographic |
| Language | English |
Creators/Contributors
| Author | Kumar, Archana |
|---|---|
| Degree supervisor | Saraswat, Krishna |
| Thesis advisor | Saraswat, Krishna |
| Thesis advisor | Griffin, Peter B |
| Thesis advisor | Plummer, James D |
| Degree committee member | Griffin, Peter B |
| Degree committee member | Plummer, James D |
| Associated with | Stanford University, Department of Electrical Engineering. |
Subjects
| Genre | Theses |
|---|---|
| Genre | Text |
Bibliographic information
| Statement of responsibility | Archana Kumar. |
|---|---|
| Note | Submitted to the Department of Electrical Engineering. |
| Thesis | Thesis Ph.D. Stanford University 2018. |
| Location | electronic resource |
Access conditions
- Copyright
- © 2018 by Archana Kumar
- License
- This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).
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