Ge/SiGe electroabsorption modulators for Si-based photonic integrated chips

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Abstract/Contents

Abstract
In chapter 1, we explain how optical interconnects can drastically improve data transmission performance while reducing power use. This is critical to the economic and environmental sustainability of the projected growth of data transmission needed for the rapid expansion of communication, commerce, and computation. We explain the importance of Si-CMOS process compatibility and energy requirements for optical components, and describe our solution using the quantum-confined Stark effect in Ge/SiGe quantum wells. In chapter 2, we summarize our improvements to the Ge/SiGe material system, requisite to the success of the surface-normal and microdisk modulators described in chapters 3 and 4. These devices are capable of high-speed, efficient modulation and compact form factors necessary for CMOS process integration. The advances described in this thesis help pave the way for widespread adoption of Ge/SiGe electroabsorption modulators for Si-based photonic integrated chips.

Description

Type of resource text
Form electronic; electronic resource; remote
Extent 1 online resource.
Publication date 2012
Issuance monographic
Language English

Creators/Contributors

Associated with Edwards, Elizabeth Hall
Associated with Stanford University, Department of Electrical Engineering
Primary advisor Harris, J. S. (James Stewart), 1942-
Primary advisor Miller, D. A. B
Thesis advisor Harris, J. S. (James Stewart), 1942-
Thesis advisor Miller, D. A. B
Thesis advisor Vuckovic, Jelena
Advisor Vuckovic, Jelena

Subjects

Genre Theses

Bibliographic information

Statement of responsibility Elizabeth Edwards.
Note Submitted to the Department of Electrical Engineering.
Thesis Thesis (Ph.D.)--Stanford University, 2012.
Location electronic resource

Access conditions

Copyright
© 2012 by Elizabeth Hall Edwards
License
This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).

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