Ge/SiGe electroabsorption modulators for Si-based photonic integrated chips
Abstract/Contents
- Abstract
- In chapter 1, we explain how optical interconnects can drastically improve data transmission performance while reducing power use. This is critical to the economic and environmental sustainability of the projected growth of data transmission needed for the rapid expansion of communication, commerce, and computation. We explain the importance of Si-CMOS process compatibility and energy requirements for optical components, and describe our solution using the quantum-confined Stark effect in Ge/SiGe quantum wells. In chapter 2, we summarize our improvements to the Ge/SiGe material system, requisite to the success of the surface-normal and microdisk modulators described in chapters 3 and 4. These devices are capable of high-speed, efficient modulation and compact form factors necessary for CMOS process integration. The advances described in this thesis help pave the way for widespread adoption of Ge/SiGe electroabsorption modulators for Si-based photonic integrated chips.
Description
Type of resource | text |
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Form | electronic; electronic resource; remote |
Extent | 1 online resource. |
Publication date | 2012 |
Issuance | monographic |
Language | English |
Creators/Contributors
Associated with | Edwards, Elizabeth Hall |
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Associated with | Stanford University, Department of Electrical Engineering |
Primary advisor | Harris, J. S. (James Stewart), 1942- |
Primary advisor | Miller, D. A. B |
Thesis advisor | Harris, J. S. (James Stewart), 1942- |
Thesis advisor | Miller, D. A. B |
Thesis advisor | Vuckovic, Jelena |
Advisor | Vuckovic, Jelena |
Subjects
Genre | Theses |
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Bibliographic information
Statement of responsibility | Elizabeth Edwards. |
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Note | Submitted to the Department of Electrical Engineering. |
Thesis | Thesis (Ph.D.)--Stanford University, 2012. |
Location | electronic resource |
Access conditions
- Copyright
- © 2012 by Elizabeth Hall Edwards
- License
- This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).
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