Laser liftoff of gallium arsenide thin films
Abstract/Contents
- Abstract
- The high cost of single-crystal III-V substrates limits the use of gallium arsenide (GaAs) and related sphalerite III–V materials in many applications, especially photovoltaics. However, by making devices from epitaxially grown III–V layers that are separated from a growth substrate, one can recycle the growth substrate to reduce costs. Here, we show damage-free removal of an epitaxial single-crystal GaAs film from its GaAs growth substrate using a laser that is absorbed by a smaller band gap, pseudomorphic indium gallium arsenide nitride layer grown between the substrate and the GaAs film. The liftoff process transfers the GaAs film to a flexible polymer substrate, and the transferred GaAs layer is indistinguishable in structural quality from its growth substrate.
Description
| Type of resource | moving image |
|---|---|
| Date created | February 2015 - March 2015 |
Creators/Contributors
| Author | Hayes, Garrett |
|---|---|
| Author | Clemens, Bruce M. |
Subjects
| Subject | GaAs |
|---|---|
| Subject | laser-liftoff |
| Subject | Department of Materials Science and Engineering |
| Subject | Stanford University |
| Subject | single-crystal |
| Genre | Motion picture |
Bibliographic information
| Related Publication | Garrett J. Hayes and Bruce M. Clemens. Laser liftoff of gallium arsenide thin films. MRS Communications, available on CJOFebruary 2015. doi:10.1557/mrc.2015.2. |
|---|---|
| Related item | |
| Location | https://purl.stanford.edu/zm215bs8409 |
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- Use and reproduction
- User agrees that, where applicable, content will not be used to identify or to otherwise infringe the privacy or confidentiality rights of individuals. Content distributed via the Stanford Digital Repository may be subject to additional license and use restrictions applied by the depositor.
- License
- This work is licensed under a Creative Commons Attribution Non Commercial No Derivatives 3.0 Unported license (CC BY-NC-ND).
Preferred citation
- Preferred Citation
- Garrett J. Hayes and Bruce M. Clemens. Laser liftoff of gallium arsenide thin films. http://purl.stanford.edu/zm215bs8409
Collection
Stanford Research Data
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- Contact
- bmc@stanford.edu
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