Code for Large-Scale Ultrahigh-Density 3D VRSM Simulation
Abstract/Contents
- Abstract
- These is the Python code for Large-Scale Ultrahigh-Density 3D Vertical Resistive Memory (VRSM) simulation. To improve the computation efficiency without losing accuracy, the simulation platform uses three simplifications: 1) wordplane resistor network that accurately captures the distributed resistance of metal wordplane; 2) reduced resistor network that accurately captures the leakage currents in 3D VRSM array and improves the computation efficiency; 3) resistor ladder that estimates the pessimistic performance of 3D VRSM architecture. Using this simulation platform, one can investigate the design guidelines of device, array and architecture to achieve large-scale ultra-dense 3D VRSM.
Description
Type of resource | software, multimedia |
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Date created | November 1, 2017 |
Creators/Contributors
Author | Jiang, Zizhen |
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Author | Qin, Shengjun |
Advisor | Wong, S. Simon |
Advisor | Wong, H. -S. Philip |
Subjects
Subject | Electrical Engineering |
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Subject | Stanford |
Bibliographic information
Related Publication | Jiang, Zizhen and Qin, Shengjun and Li, Haitong and Fujii, Shosuke and Lee, Dongjin and Wong, S. Simon and Wong, H.-S. Philip. Selector requirements for tera-bit ultra-high-density 3D vertical RRAM. In IEEE Symposium on VLSI Technology (pp. 107-108), 2018. https://doi.org/10.1109/VLSIT.2018.8510689 |
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Related Publication | Qin, Shengjun and Jiang, Zizhen and Li, Haitong and Fujii, Shosuke and Lee, Dongjin and Wong, S. Simon and Wong, H.-S. Philip. Next-generation ultrahigh-density 3-D vertical resistive switching memory (VRSM)—Part I: Accurate and computationally efficient modeling. In IEEE Transactions on Electron Devices, 66(12), pp. 5139-5146, 2019. https://doi.org/10.1109/TED.2019.2950606 |
Related Publication | Jiang, Zizhen and Qin, Shengjun and Li, Haitong and Fujii, Shosuke and Lee, Dongjin and Wong, S. Simon and Wong, H.-S. Philip. Next-generation ultrahigh-density 3-D vertical resistive switching memory (VRSM)—Part II: Design guidelines for device, array, and architecture. In IEEE Transactions on Electron Devices, 66(12), pp. 5147-5154, 2019. https://doi.org/10.1109/TED.2019.2950595 |
Location | https://purl.stanford.edu/zg716gc0197 |
Access conditions
- Use and reproduction
- User agrees that, where applicable, content will not be used to identify or to otherwise infringe the privacy or confidentiality rights of individuals. Content distributed via the Stanford Digital Repository may be subject to additional license and use restrictions applied by the depositor.
Preferred citation
- Preferred Citation
- Jiang, Zizhen and Qin, Shengjun and Wong, S. Simon and Wong, H.-S. Philip. (2019). Code for Large-Scale Ultrahigh-Density 3D VRSM Simulation. Stanford Digital Repository. Available at: https://purl.stanford.edu/zg716gc0197
Collection
Stanford Research Data
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- Contact
- zizhenj@gmail.com
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