Silicon-germanium/germanium nanowire platform for nanoelectronics and nanophotonics
Abstract/Contents
- Abstract
- A novel approach to build SiGe/Ge nanowire platform along with device demonstrations will be presented for advanced high-performance transistors and nanophotonic devices. Our proposed method exploits CMOS technology and meets the requirements of high mobility material incorporation, 3D-stacking, and multi-gate controllability. Innovative techniques and solutions to various challenges will be presented to address the following topics: 3D-stacked SiGe/Ge gate-all-around (GAA) device architecture, low resistance contact to n-Ge, suspended nanowires above Si substrate
Description
Type of resource | text |
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Form | electronic resource; remote; computer; online resource |
Extent | 1 online resource |
Place | California |
Place | [Stanford, California] |
Publisher | [Stanford University] |
Copyright date | 2020; ©2020 |
Publication date | 2020; 2020 |
Issuance | monographic |
Language | English |
Creators/Contributors
Author | Suh, Junkyo |
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Degree supervisor | Brongersma, Mark L |
Degree supervisor | Saraswat, Krishna |
Thesis advisor | Brongersma, Mark L |
Thesis advisor | Saraswat, Krishna |
Thesis advisor | Plummer, James D |
Degree committee member | Plummer, James D |
Associated with | Stanford University, Department of Electrical Engineering |
Subjects
Genre | Theses |
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Genre | Text |
Bibliographic information
Statement of responsibility | Junkyo Suh |
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Note | Submitted to the Department of Electrical Engineering |
Thesis | Thesis Ph.D. Stanford University 2020 |
Location | electronic resource |
Access conditions
- Copyright
- © 2020 by Junkyo Suh
- License
- This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).
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