Silicon-germanium/germanium nanowire platform for nanoelectronics and nanophotonics

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A novel approach to build SiGe/Ge nanowire platform along with device demonstrations will be presented for advanced high-performance transistors and nanophotonic devices. Our proposed method exploits CMOS technology and meets the requirements of high mobility material incorporation, 3D-stacking, and multi-gate controllability. Innovative techniques and solutions to various challenges will be presented to address the following topics: 3D-stacked SiGe/Ge gate-all-around (GAA) device architecture, low resistance contact to n-Ge, suspended nanowires above Si substrate


Type of resource text
Form electronic resource; remote; computer; online resource
Extent 1 online resource
Place California
Place [Stanford, California]
Publisher [Stanford University]
Copyright date 2020; ©2020
Publication date 2020; 2020
Issuance monographic
Language English


Author Suh, Junkyo
Degree supervisor Brongersma, Mark L
Degree supervisor Saraswat, Krishna
Thesis advisor Brongersma, Mark L
Thesis advisor Saraswat, Krishna
Thesis advisor Plummer, James D
Degree committee member Plummer, James D
Associated with Stanford University, Department of Electrical Engineering


Genre Theses
Genre Text

Bibliographic information

Statement of responsibility Junkyo Suh
Note Submitted to the Department of Electrical Engineering
Thesis Thesis Ph.D. Stanford University 2020
Location electronic resource

Access conditions

© 2020 by Junkyo Suh
This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).

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