Transport in gapped topological surface states

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Abstract/Contents

Abstract
Three-dimensional topological insulators feature two-dimensional metallic surface states. These surface states are protected by the topological nature of the insulating bulk, meaning they must remain gapless present even when the surface is perturbed by, for example, disorder. Topological protection, however, has limits. Perturbations that affect the topological description of a system can open a gap in its surface states. Using electronic transport measurements of devices based on the topological insulator Sb2Te3, this thesis explores three such perturbations.

Description

Type of resource text
Form electronic resource; remote; computer; online resource
Extent 1 online resource.
Place California
Place [Stanford, California]
Publisher [Stanford University]
Copyright date 2021; ©2021
Publication date 2021; 2021
Issuance monographic
Language English

Creators/Contributors

Author Rosen, Ilan Thomas
Degree supervisor Goldhaber-Gordon, David, 1972-
Thesis advisor Goldhaber-Gordon, David, 1972-
Thesis advisor Kapitulnik, Aharon
Thesis advisor Moler, Kathryn A
Degree committee member Kapitulnik, Aharon
Degree committee member Moler, Kathryn A
Associated with Stanford University, Department of Applied Physics

Subjects

Genre Theses
Genre Text

Bibliographic information

Statement of responsibility Ilan T. Rosen.
Note Submitted to the Department of Applied Physics.
Thesis Thesis Ph.D. Stanford University 2021.
Location https://purl.stanford.edu/yx121mv0453

Access conditions

Copyright
© 2021 by Ilan Thomas Rosen
License
This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).

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