Transport in gapped topological surface states
Abstract/Contents
- Abstract
- Three-dimensional topological insulators feature two-dimensional metallic surface states. These surface states are protected by the topological nature of the insulating bulk, meaning they must remain gapless present even when the surface is perturbed by, for example, disorder. Topological protection, however, has limits. Perturbations that affect the topological description of a system can open a gap in its surface states. Using electronic transport measurements of devices based on the topological insulator Sb2Te3, this thesis explores three such perturbations.
Description
Type of resource | text |
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Form | electronic resource; remote; computer; online resource |
Extent | 1 online resource. |
Place | California |
Place | [Stanford, California] |
Publisher | [Stanford University] |
Copyright date | 2021; ©2021 |
Publication date | 2021; 2021 |
Issuance | monographic |
Language | English |
Creators/Contributors
Author | Rosen, Ilan Thomas |
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Degree supervisor | Goldhaber-Gordon, David, 1972- |
Thesis advisor | Goldhaber-Gordon, David, 1972- |
Thesis advisor | Kapitulnik, Aharon |
Thesis advisor | Moler, Kathryn A |
Degree committee member | Kapitulnik, Aharon |
Degree committee member | Moler, Kathryn A |
Associated with | Stanford University, Department of Applied Physics |
Subjects
Genre | Theses |
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Genre | Text |
Bibliographic information
Statement of responsibility | Ilan T. Rosen. |
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Note | Submitted to the Department of Applied Physics. |
Thesis | Thesis Ph.D. Stanford University 2021. |
Location | https://purl.stanford.edu/yx121mv0453 |
Access conditions
- Copyright
- © 2021 by Ilan Thomas Rosen
- License
- This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).
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