Analysis of Electron Hole Propagation in Low-Temperature <111>-aligned Silicon Crystals
Abstract/Contents
- Abstract
- We implement the Dresselhaus-Kip-Kittel (DKK) Model to evaluate and simulate signals obtained from electron holes propagating through a low-temperature silicon crystal in a uniform electric field. The DKK model, first formulated in the 1950s, categorizes the valence energy levels in Silicon into two warped, degenerate bands (denoted “heavy” and “light” respectively) and a spherical spin-orbit band, deriving the approximate energy functions of each band. It has remained a popular model for decades due to its simplicity and relative accuracy, despite some disagreements with recent first-principles calculations. Here we attempt to fit the DKK model to the signals generated by electron-hole pair creating interactions in a millimeter-scale crystalline silicon substrate, where the model’s <100> energy preference results in tri-lobed anisotropic patterns. The model can provide some basic explanations of particular features found in the signals, such as signal profile shapes, but has trouble connecting to an overall quantifiable anisotropy. Proper modeling of the transport of electron holes in crystalline silicon will help make these substrates useful direct detection media, especially for distinguishing the patterns of potential WIMPs.
Description
Type of resource | text |
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Date created | June 7, 2017 |
Creators/Contributors
Author | Allen, James |
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Degree granting institution | Stanford University, Department of Physics |
Primary advisor | Cabrera, Blas |
Advisor | Gratta, Giorgio |
Subjects
Subject | Stanford University Department of Physics |
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Subject | CDMS |
Subject | DKK Model |
Subject | Anisotropy |
Genre | Thesis |
Bibliographic information
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- Use and reproduction
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- License
- This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).
Preferred citation
- Preferred Citation
Allen, James. (2017). Analysis of Electron Hole Propagation in
Low-Temperature <111>-aligned Silicon Crystals. Stanford Digital Repository. Available at: http://purl.stanford.edu/yk926pp9521
Collection
Undergraduate Theses, Department of Physics
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- Contact
- jallen37@stanford.edu
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