The Effect of Hole Transport Material Pore Filling on Device Performance in Solid-State Dye-Sensitized Solar Cells
Abstract/Contents
- Abstract
- This thesis documents a detailed investigation of the effect of hole transport material (HTM) pore filling on the photovoltaic performance of solid-state dye-sensitized solar cells (ss-DSCs). The efficiency and photovoltaic characteristics of ss-DSCs improve significantly with the pore filling fraction (PFF) of the HTM 2,2’,7,7’-tetrakis-(N,N-di-p-methoxyphenylamine)9,9’- spirobifluorene (spiro-OMeTAD), and the mechanisms for these improvements were studied with transient absorption spectroscopy and transient photovoltage/photocurrent measurements. As the spiro-OMeTAD PFF is increased from 26% to 65%, there is a higher hole injection efficiency from dye cations to spiro-OMeTAD because more dye molecules are covered with spiro-OMeTAD, an order-of-magnitude slower recombination rate because holes can diffuse further away from the dye/HTM interface, and a 50% higher ambipolar diffusion coefficient due to an improved percolation network. Device simulations predict that if 100% PFF could be achieved for thicker devices, the efficiency of ss-DSCs using a conventional ruthenium-dye would increase by 25% beyond its current value.
Description
| Type of resource | text |
|---|---|
| Date created | 2011 |
Creators/Contributors
| Author | Melas-Kyriazi, John |
|---|---|
| Advisor | Stanford University, Program in Engineering Physics, 2011 |
| Advisor | Clemens, Bruce M. |
| Primary advisor | McGehee, Michael D. |
Subjects
| Subject | photovoltaic devices |
|---|---|
| Subject | solar cells |
| Subject | organic electronics |
| Subject | titanium dioxide |
| Subject | photochemistry |
| Genre | Thesis |
Bibliographic information
| Related Publication | Adapted from: J. Melas-Kyriazi, I.-K. Ding, A. Marchioro, A. Punzi, B. E. Hardin, G. F. Burkhard, N. Tétreault, M. Grätzel, J.-E. Moser, M. D. McGehee, Adv. Energy Mater. 2011, 1, 407-414. doi: 10.1002/aenm.201100046 |
|---|---|
| Related item | |
| Location | https://purl.stanford.edu/yg514nn4311 |
Access conditions
- Use and reproduction
- User agrees that, where applicable, content will not be used to identify or to otherwise infringe the privacy or confidentiality rights of individuals. Content distributed via the Stanford Digital Repository may be subject to additional license and use restrictions applied by the depositor.
- License
- This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).
Preferred citation
- Preferred Citation
- Melas-Kyriazi, John (2011). The effect of hole transport material pore filling on device performance in solid-state dye-sensitized solar cells. Stanford Digital Repository. Available at http://purl.stanford.edu/yg514nn4311.
Collection
Undergraduate Theses, Program in Engineering Physics
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- skota@stanford.edu
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