Electrolyte gating of nanoscale complex oxide devices
Abstract/Contents
- Abstract
- Electrolyte gating is a powerful method to induce large modulations in charge carrier density at a surface. This technique enables access to unexplored regions of the phase diagram in a variety of materials, and allows for devices at charge carrier densities beyond the dielectric breakdown limit. I will show how this technique can be combined with conventional nanofabrication to create novel gate-tunable nanoscale devices. I will show that electrolyte gating can be used in combination with nanopatterned conventional gates to realize a mesoscopic 2-dimensional electron system (2DES) in strontium titanate. Universal conductance fluctuations in the strontium titanate enable analysis of the rate and the sources of electron dephasing in this system. I will also demonstrate the use of electrolyte gating to reversibly tune the critical current of Josephson junction in a high-temperature superconductor fabricated with a Helium-ion beam. Finally, I will introduce a method to prevent electrochemistry in the device channel, improving the mobility of electrolyte-gated systems and the clarity of electrolyte gating results.
Description
Type of resource | text |
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Form | electronic; electronic resource; remote |
Extent | 1 online resource. |
Publication date | 2017 |
Issuance | monographic |
Language | English |
Creators/Contributors
Associated with | Stanwyck, Samuel Walter |
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Associated with | Stanford University, Department of Applied Physics. |
Primary advisor | Goldhaber-Gordon, David, 1972- |
Thesis advisor | Goldhaber-Gordon, David, 1972- |
Thesis advisor | Hwang, Harold Yoonsung, 1970- |
Thesis advisor | Suzuki, Yuri, (Applied physicist) |
Advisor | Hwang, Harold Yoonsung, 1970- |
Advisor | Suzuki, Yuri, (Applied physicist) |
Subjects
Genre | Theses |
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Bibliographic information
Statement of responsibility | Samuel Walter Stanwyck. |
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Note | Submitted to the Department of Applied Physics. |
Thesis | Thesis (Ph.D.)--Stanford University, 2017. |
Location | electronic resource |
Access conditions
- Copyright
- © 2017 by Samuel Walter Stanwyck
- License
- This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).
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