Impact of metal gate work function variability and reliability on MOSFETs and theory and application of topological insulators
Abstract/Contents
- Abstract
- For almost half a century, IC technology development has been successfully guided under the Moore's Law. However, as transistor has to scale further down for further integration, a number of of parasitic effects, such as variability, reliability and power dissipation start to impede the benefit of scaling. Under such situation, we need to study these obstacles and overcome them by using new material, new processing and technology. In the first part of this thesis, the metal gate work function variability problem and also reliability problem of MOS transistor are discussed. Modeling and experimental study suggest that gate work function induced threshold voltage variability is going to become the dominating variability factor beyond the 22nm technology node at both device and circuits level. Also discussed is a new negative bias temperature instability (NBTI) model for the recoverable part (RNBTI). This model is able to cover the full range of various experimental data in the different stress/recovery phases. In the second part of this thesis, the study on a newly discovered class of material, so called topological insulators is reported, including the search for strong interacting topological insulators and their potential applications in interconnects and optoelectronics.
Description
| Type of resource | text |
|---|---|
| Form | electronic; electronic resource; remote |
| Extent | 1 online resource. |
| Publication date | 2013 |
| Issuance | monographic |
| Language | English |
Creators/Contributors
| Associated with | Zhang, Xiao |
|---|---|
| Associated with | Stanford University, Department of Electrical Engineering. |
| Primary advisor | Nishi, Yoshio, 1940- |
| Thesis advisor | Nishi, Yoshio, 1940- |
| Thesis advisor | Saraswat, Krishna |
| Thesis advisor | Zhang, Shoucheng |
| Advisor | Saraswat, Krishna |
| Advisor | Zhang, Shoucheng |
Subjects
| Genre | Theses |
|---|
Bibliographic information
| Statement of responsibility | Xiao Zhang. |
|---|---|
| Note | Submitted to the Department of Electrical Engineering. |
| Thesis | Thesis (Ph.D.)--Stanford University, 2013. |
| Location | electronic resource |
Access conditions
- Copyright
- © 2013 by Xiao Zhang
Also listed in
Loading usage metrics...