Germanium-tin (GeSn) Technology

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Abstract/Contents

Abstract
Semiconducting germanium-tin (GeSn) alloy is a versatile material system that is attracting significant research interest due to its several unique and beneficial properties, such as the ability to show a direct band gap and the compatibility with conventional Si technology. GeSn alloy system is also predicted to exhibit high electron and hole mobilities, making it an ideal material platform for co-integration of Si compatible photonics and high speed CMOS devices. This thesis discusses a very broad range of topics pertinent to GeSn, beginning with a detailed theoretical study of electronic properties of GeSn using both first principles and empirical methods. Challenges in obtaining high quality epitaxial GeSn thin films are addressed. Innovations in GeSn material processing and device fabrication are presented. Applications of the GeSn technology thus developed to high performance logic devices, Si-compatible photonics and 3-dimensional integrated circuits are discussed.

Description

Type of resource text
Form electronic; electronic resource; remote
Extent 1 online resource.
Publication date 2013
Issuance monographic
Language English

Creators/Contributors

Associated with Gupta, Suyog
Associated with Stanford University, Department of Electrical Engineering.
Primary advisor Saraswat, Krishna
Thesis advisor Saraswat, Krishna
Thesis advisor Harris, J. S. (James Stewart), 1942-
Thesis advisor Nishi, Yoshio, 1940-
Advisor Harris, J. S. (James Stewart), 1942-
Advisor Nishi, Yoshio, 1940-

Subjects

Genre Theses

Bibliographic information

Statement of responsibility Suyog Gupta.
Note Submitted to the Department of Electrical Engineering.
Thesis Thesis (Ph.D.)--Stanford University, 2013.
Location electronic resource

Access conditions

Copyright
© 2013 by Suyog Gupta
License
This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).

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