Germanium-tin (GeSn) Technology
Abstract/Contents
- Abstract
- Semiconducting germanium-tin (GeSn) alloy is a versatile material system that is attracting significant research interest due to its several unique and beneficial properties, such as the ability to show a direct band gap and the compatibility with conventional Si technology. GeSn alloy system is also predicted to exhibit high electron and hole mobilities, making it an ideal material platform for co-integration of Si compatible photonics and high speed CMOS devices. This thesis discusses a very broad range of topics pertinent to GeSn, beginning with a detailed theoretical study of electronic properties of GeSn using both first principles and empirical methods. Challenges in obtaining high quality epitaxial GeSn thin films are addressed. Innovations in GeSn material processing and device fabrication are presented. Applications of the GeSn technology thus developed to high performance logic devices, Si-compatible photonics and 3-dimensional integrated circuits are discussed.
Description
Type of resource | text |
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Form | electronic; electronic resource; remote |
Extent | 1 online resource. |
Publication date | 2013 |
Issuance | monographic |
Language | English |
Creators/Contributors
Associated with | Gupta, Suyog |
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Associated with | Stanford University, Department of Electrical Engineering. |
Primary advisor | Saraswat, Krishna |
Thesis advisor | Saraswat, Krishna |
Thesis advisor | Harris, J. S. (James Stewart), 1942- |
Thesis advisor | Nishi, Yoshio, 1940- |
Advisor | Harris, J. S. (James Stewart), 1942- |
Advisor | Nishi, Yoshio, 1940- |
Subjects
Genre | Theses |
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Bibliographic information
Statement of responsibility | Suyog Gupta. |
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Note | Submitted to the Department of Electrical Engineering. |
Thesis | Thesis (Ph.D.)--Stanford University, 2013. |
Location | electronic resource |
Access conditions
- Copyright
- © 2013 by Suyog Gupta
- License
- This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).
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