Modification and manipulation of one-dimensional carbon materials for electronics
Abstract/Contents
- Abstract
- As Moore's Law demands ever smaller transistors, it becomes necessary to solve the deleterious effects of scaling. Graphene, with its intrinsically two-dimensional nature, offers a potential solution to the short channel effects seen with traditional geometries and materials. Using a 2D material, or one-dimensional in the form of either graphene nanoribbons (GNRs) or single walled carbon nanotubes (SWNTs), instead of bulk Si allows for an intrinsically compact device geometry, which should offer the ability to maintain high gate control far into the sub-10 nm regime. Graphene based materials also show considerably higher carrier mobility than Si. It is anticipated then that SWNT/Graphene transistors will show significantly better metrics in both speed and energy delay than Si based transistors. There are critical challenges that currently prevent the wider implementation of carbon electronics, the lack of bandgap in graphene, the roughness of GNRs, and the variability of SWNTs. This thesis will describe several projects aimed at addressing these challenges by modification and manipulation of these carbon materials. In the first project described in this thesis, we cover high-field transport in GNRs on silicon dioxide, up to breakdown. Next, in the third chapter, we investigate chlorine plasma reaction with graphene and GNRs and compare with hydrogen and fluorine plasma reactions. In the fourth chapter, we investigate the effect of uniaxial strain (0%-6%) introduced into individual GNRs by atomic force microscopy (AFM). In the fifth chapter, we characterize ~98% pure semiconducting single walled carbon nanotubes (s-SWNTs) obtained by gel filtration of arc-discharge grown SWNTs with diameters in the range of 1.2-1.6 nm. In the sixth chapter, we present a process where highly pure s-SWNTs are separated from bulk materials and self-assembled into densely aligned rafts driven by depletion attraction forces. In the seventh chapter, s-SWNTs are self-assembled using these same depletion attraction forces into rafts along lithographically defined patterns of narrow pitch of 100 and 200 nm.
Description
| Type of resource | text |
|---|---|
| Form | electronic; electronic resource; remote |
| Extent | 1 online resource. |
| Publication date | 2014 |
| Issuance | monographic |
| Language | English |
Creators/Contributors
| Associated with | Wu, Justin |
|---|---|
| Associated with | Stanford University, Department of Electrical Engineering |
| Primary advisor | Dai, Hongjie, 1966- |
| Thesis advisor | Dai, Hongjie, 1966- |
| Thesis advisor | Pop, Eric |
| Thesis advisor | Wong, Hon-Sum Philip, 1959- |
| Advisor | Pop, Eric |
| Advisor | Wong, Hon-Sum Philip, 1959- |
Subjects
| Genre | Theses |
|---|
Bibliographic information
| Statement of responsibility | Justin Wu. |
|---|---|
| Note | Submitted to the Department of Electrical Engineering. |
| Thesis | Thesis (Ph.D.)--Stanford University, 2014. |
| Location | https://purl.stanford.edu/xf832cm3248 |
Access conditions
- Copyright
- © 2014 by Justin Zachary Wu
- License
- This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).
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