Nanoscale germanium crystal growth and epitaxy control for advanced electronics and solar cells

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Abstract/Contents

Abstract
Semiconductor crystal growth at the nanoscale and integration of different materials systems are central themes of materials research. They enable novel materials processes and device applications, and may shape the landscape of future technologies. A major challenge is growth of high-quality single crystal semiconductors (e.g. Ge) on large-mismatch (e.g. Si) and non-crystalline (e.g. glass) substrates, while managing the thermal constraints of the underlying substrates. As-grown vertical semiconductor nanowires have been demonstrated as sensors, and nanoelectronic and nanophotonic devices. However, little attention has been paid to their unique structural properties: vertical Ge nanowires can be epitaxially grown on (111)-oriented Ge and Si substrates. In my thesis, I will focus on nanowire-seeded crystallization and metal-induced crystallization to realize three-dimensional integration and nanostructured solar cells. I have also studied the thermal stability of core-shell nanowire heterostructures, which represent a new type of epitaxy control in a nanoscale coaxial geometry. Fundamental aspects of crystal growth at the nanoscale will be discussed.

Description

Type of resource text
Form electronic; electronic resource; remote
Extent 1 online resource.
Publication date 2011
Issuance monographic
Language English

Creators/Contributors

Associated with Hu, Shu
Associated with Stanford University, Department of Materials Science and Engineering
Primary advisor McIntyre, Paul Cameron
Thesis advisor McIntyre, Paul Cameron
Thesis advisor Brongersma, Mark L
Thesis advisor Nix, William D
Advisor Brongersma, Mark L
Advisor Nix, William D

Subjects

Genre Theses

Bibliographic information

Statement of responsibility Shu Hu.
Note Submitted to the Department of Materials Science and Engineering.
Thesis Thesis (Ph.D.)--Stanford University, 2011.
Location electronic resource

Access conditions

Copyright
© 2011 by Shu Hu
License
This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).

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