High temperature and transient behavior of GaN heterostructure based high electron mobility micro-pressure sensors

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Abstract/Contents

Abstract
Gallium nitride (GaN) is a wide bandgap semiconductor that is a promising material platform to build sensors and electronics for operation in harsh environments (e.g., Venus). AlGaN/GaN and InAlN/GaN heterostructures are leveraged to build transistors by utilizing a highly conductive sheet of electrons that forms at the interface of these materials, known as a 2-dimensional electron gas (2DEG). A piezoelectric polarization at the interface of GaN and AlGaN or InAlN are partially responsible for the 2DEG, and also enable strain and pressure sensing. The goal of this work was to design, microfabricate and characterize a temperature-tolerant, pressure sensor to support sensing in high temperature environments. This work characterized the pressure response of an InAlN/GaN micro-pressure sensor from 0 to 28.5 psig and the temperature response of solid state and released device up to 550°C. While InAlN/GaN and AlGaN/GaN devices show promise for high temperature pressure sensing, challenges around repeatability also need to be addressed. In order to understand the temperature dependence of the pressure sensitivity and transient device response, electronic traps are characterized in an AlGaN/GaN device between room temperature and 200°C.

Description

Type of resource text
Form electronic; electronic resource; remote
Extent 1 online resource.
Publication date 2018
Issuance monographic
Language English

Creators/Contributors

Associated with Chapin, Caitlin
Associated with Stanford University, Department of Mechanical Engineering.
Primary advisor Kenny, Thomas William
Primary advisor Senesky, Debbie
Thesis advisor Kenny, Thomas William
Thesis advisor Senesky, Debbie
Thesis advisor Pruitt, Beth
Advisor Pruitt, Beth

Subjects

Genre Theses

Bibliographic information

Statement of responsibility Caitlin Chapin.
Note Submitted to the Department of Mechanical Engineering.
Thesis Thesis (Ph.D.)--Stanford University, 2018.
Location electronic resource

Access conditions

Copyright
© 2018 by Caitlin Anne Chapin
License
This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).

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