Silicon photonics for optical interconnects, sensing and electron acceleration
Abstract/Contents
- Abstract
- Silicon photonics has been extensively studied in recent years due to its compatibility with electronics and its potential for a wide range of applications. As three applications of this tremendous potential, we attempt to implement silicon photonic devices on standard silicon wafers with CMOS compatible technology that is well suited for optical interconnects, optical sensing and laser electron acceleration applications. We have demonstrated low loss silicon waveguides from standard silicon wafers, eliminating the need for silicon-on-insulator (SOI) wafers. The fabricated silicon waveguides show low propagation loss and oval shape, which have comparable loss to existing low loss SOI channel waveguides (2-3 dB/cm). This silicon photonic technology can be further expanded to fabricate multi-layered photonic devices for 3D photonics. Our fabrication methods simplify integration of photonics and electronics and show promise for the implementation of optical interconnects in standard silicon wafers. In addition to applications in optical interconnects targeted to solve the interconnect bottleneck, our silicon photonic technology can be applied to integrated optical sensors for temperature, chemical and biological signals. By using the air cladding method, we have demonstrated waveguide Bragg reflectors that generate asymmetric Fano resonances. Sensitive to changes in refractive index, these Bragg reflectors can measure environmental changes by two mechanisms: spectral shifts and spectral shape changes. We have demonstrated integrated temperature sensors based on the spectral shifts with sensitivity of 77pm/oC, comparable to the theoretical limit of the devices. Another important application of my silicon photonics research is a cost-effective, integrated laser driven electron accelerator (SLAC-on-a-chip) used as an X-ray source. We have designed and fabricated dielectric laser electron accelerators that achieve large accelerating gradients and that can be fabricated using standard silicon wafers and high-aspect-ratio processing technology. Finite-difference-time-domain (FDTD) simulations show that the silicon buried gratings can increase the accelerating factors to more than double those of reported quartz grating accelerators; consequently, silicon buried gratings only require 40% of the input laser fluence to achieve the same accelerating gradient. With a 100fs pulse laser, our silicon buried gratings can achieve a maximum gradient of 1.1 GV/m, indicating that the buried-grating accelerators have potential for numerous electron-accelerator applications.
Description
| Type of resource | text |
|---|---|
| Form | electronic; electronic resource; remote |
| Extent | 1 online resource. |
| Publication date | 2013 |
| Issuance | monographic |
| Language | English |
Creators/Contributors
| Associated with | Chang, Chia-Ming |
|---|---|
| Associated with | Stanford University, Department of Electrical Engineering. |
| Primary advisor | Solgaard, Olav |
| Thesis advisor | Solgaard, Olav |
| Thesis advisor | Howe, Roger Thomas |
| Thesis advisor | Miller, D. A. B |
| Advisor | Howe, Roger Thomas |
| Advisor | Miller, D. A. B |
Subjects
| Genre | Theses |
|---|
Bibliographic information
| Statement of responsibility | Chia-Ming Chang. |
|---|---|
| Note | Submitted to the Department of Electrical Engineering. |
| Thesis | Thesis (Ph.D.)--Stanford University, 2013. |
| Location | electronic resource |
Access conditions
- Copyright
- © 2013 by Chia-Ming Chang
- License
- This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).
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