Laser acceleration and deflection of sub-100 keV electrons with silicon dielectric laser accelerator structures
Abstract/Contents
- Abstract
- Particle accelerators are ubiquitous in modern research, industrial, and medical facilities, but they are often large, prohibitively expensive, and have limited accessibility. This size and expense is due in large part to the low accelerating gradients achievable in radio-frequency accelerators, limited by high-field breakdown to ~30 MeV/m. Leveraging nanofabrication techniques developed by the electronics industry and ultrafast laser technology, Dielectric Laser Accelerators (DLAs) have the potential to provide one-to-two orders of magnitude higher accelerating gradients than radio frequency accelerators, allowing compact and accessible accelerators to be produced. This thesis describes the demonstration of laser acceleration and deflection of sub-relativistic 65-96.3 keV electrons using silicon-based Inverse Smith-Purcell structures and silicon coupled mode dual pillar structures. This marked the first successful demonstration of silicon-based dielectric laser acceleration, first measurement of electron deflection using DLAs, and the first demonstration of a uniform field coupled-mode accelerator at sub-relativistic energies. Electrons synchronously interacting with the optical near-field of the silicon grating structures are accelerated with gradients of up to 370 MeV/m and deflected with gradients up to 255 MeV/m, more than one order of magnitude higher gradients than used in typical radio-frequency accelerators. The organization of this thesis is as follows: first, we describe the principles behind dielectric laser accelerators and present the design of the dielectric laser accelerators used in this thesis. Then we describe the 100 keV modular electron optics column built as a test platform for rapidly prototyping DLA devices. We then describe the first measurement of dielectric laser acceleration and deflection of electrons using silicon Inverse Smith-Purcell gratings with accelerating gradients up to 220 MeV/m. Next, acceleration and deflection of electrons with dual pillar silicon gratings using both Inverse Smith-Purcell modes and coupled modes with a uniform accelerating gradient are presented. Finally, the prospect of a future "Accelerator on a Chip" is explored, including scalability and integration of DLA devices with on-chip electron sources and laser power delivery.
Description
| Type of resource | text |
|---|---|
| Form | electronic; electronic resource; remote |
| Extent | 1 online resource. |
| Publication date | 2016 |
| Issuance | monographic |
| Language | English |
Creators/Contributors
| Associated with | Leedle, Kenneth J |
|---|---|
| Associated with | Stanford University, Department of Electrical Engineering. |
| Primary advisor | Harris, J. S. (James Stewart), 1942- |
| Thesis advisor | Harris, J. S. (James Stewart), 1942- |
| Thesis advisor | Byer, R. L. (Robert L.), 1942- |
| Thesis advisor | Solgaard, Olav |
| Advisor | Byer, R. L. (Robert L.), 1942- |
| Advisor | Solgaard, Olav |
Subjects
| Genre | Theses |
|---|
Bibliographic information
| Statement of responsibility | Kenneth J. Leedle. |
|---|---|
| Note | Submitted to the Department of Electrical Engineering. |
| Thesis | Thesis (Ph.D.)--Stanford University, 2016. |
| Location | electronic resource |
Access conditions
- Copyright
- © 2016 by Kenneth James Leedle
- License
- This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).
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