Interplay between thermal and electrical effects in phase-change memory

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Abstract/Contents

Abstract
Phase-change memory~(PCM) has undergone significant academic and industrial research improvements in the last 15 years. After much development, it is now poised to enter the market as a storage-class memory~(SCM), with performance and cost between NAND flash and DRAM. This thesis presents research works that center around improved thermal understanding with a view toward improving the PCM characteristics. The chapters focus on the following areas: thermal characterization of phase-change layers (PCL) using a micro-thermal stage (MTS), thermal conductivity measurements of amorphous dielectric multilayers, implementation of a low-thermal conductivity insulating multilayer for low-energy PCM, and thermal simulations to explore design choices in a 3D vertical chain cell-type (VCC) PCM. This work will highlight the performance gains attained and the future prospects which will help drive PCM to be as ubiquitous as NAND flash in the upcoming decade.

Description

Type of resource text
Form electronic; electronic resource; remote
Extent 1 online resource.
Publication date 2017
Issuance monographic
Language English

Creators/Contributors

Associated with Fong, Scott Warren
Associated with Stanford University, Department of Electrical Engineering
Primary advisor Wong, Hon-Sum Philip, 1959-
Thesis advisor Wong, Hon-Sum Philip, 1959-
Thesis advisor Asheghi, Mehdi
Thesis advisor Pop, Eric
Advisor Asheghi, Mehdi
Advisor Pop, Eric

Subjects

Genre Theses

Bibliographic information

Statement of responsibility Scott Warren Fong.
Note Submitted to the Department of Electrical Engineering.
Thesis Thesis (Ph.D.)--Stanford University, 2017.
Location https://purl.stanford.edu/wk821dg5425

Access conditions

Copyright
© 2017 by Scott Warren Fong
License
This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).

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