Interplay between thermal and electrical effects in phase-change memory
Abstract/Contents
- Abstract
- Phase-change memory~(PCM) has undergone significant academic and industrial research improvements in the last 15 years. After much development, it is now poised to enter the market as a storage-class memory~(SCM), with performance and cost between NAND flash and DRAM. This thesis presents research works that center around improved thermal understanding with a view toward improving the PCM characteristics. The chapters focus on the following areas: thermal characterization of phase-change layers (PCL) using a micro-thermal stage (MTS), thermal conductivity measurements of amorphous dielectric multilayers, implementation of a low-thermal conductivity insulating multilayer for low-energy PCM, and thermal simulations to explore design choices in a 3D vertical chain cell-type (VCC) PCM. This work will highlight the performance gains attained and the future prospects which will help drive PCM to be as ubiquitous as NAND flash in the upcoming decade.
Description
Type of resource | text |
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Form | electronic; electronic resource; remote |
Extent | 1 online resource. |
Publication date | 2017 |
Issuance | monographic |
Language | English |
Creators/Contributors
Associated with | Fong, Scott Warren |
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Associated with | Stanford University, Department of Electrical Engineering |
Primary advisor | Wong, Hon-Sum Philip, 1959- |
Thesis advisor | Wong, Hon-Sum Philip, 1959- |
Thesis advisor | Asheghi, Mehdi |
Thesis advisor | Pop, Eric |
Advisor | Asheghi, Mehdi |
Advisor | Pop, Eric |
Subjects
Genre | Theses |
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Bibliographic information
Statement of responsibility | Scott Warren Fong. |
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Note | Submitted to the Department of Electrical Engineering. |
Thesis | Thesis (Ph.D.)--Stanford University, 2017. |
Location | https://purl.stanford.edu/wk821dg5425 |
Access conditions
- Copyright
- © 2017 by Scott Warren Fong
- License
- This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).
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