Characterization of thermal systems using low level resistance measurements and the development and validation of a high-stability ALD platinum thermal accelerometer
Abstract/Contents
- Abstract
- The thermal properties of the materials used in microelectromechanical systems (MEMS) are of increasing concern as devices progressively miniaturize with improved fabrication technologies. Temperature sensitivity (or insensitivity) is often a major consideration for MEMS sensors, as many components of a sensor's output drift with and depend on temperature. Thus, thermal characterization should be a necessary step for any sensor material. This thesis begins with thermal conductivity measurements for size-limited highly-doped silicon and ALD platinum. Though these results were mainly internal to lab-group needs, the methods used are widely applicable to other studies. As MEMS manufacturing techniques and technologies advance and mature, previously encountered limitations should no longer be assumed. The thermal accelerometer is a device that has found limited use within the MEMS community, thanks to its high power consumption and notably low bandwidth. However, with new fabrication techniques the thermal accelerometer's performance can be pushed in new and exciting ways, potentially expanding its usability for a larger variety of applications. Here we present the results from the first thermal accelerometer fabricated using Plasma Enhanced Atomic Layer Deposition (PEALD). PEALD allows for ultra-thin, low defect, high-density platinum films that deliver excellent stability and accuracy. We offer a 100× cross-section reduction relative to previous thermal accelerometers, thereby increasing the heating efficiency and decreasing thermal time constants. The suspended resistance thermometers and heaters capitalize on the properties provided by PEALD and Pt: pronounced stability, high resistivity, and linear temperature coefficient of resistance (TcR), giving our device tractable and consistent results. For a heater temperature rise of 150 degrees C and acceleration between +/- 1g, this device has a raw sensitivity of 54e-3 C/g, excellent cross-axis isolation, high-linearity, and remarkably low drift.
Description
| Type of resource | text |
|---|---|
| Form | electronic resource; remote; computer; online resource |
| Extent | 1 online resource. |
| Place | California |
| Place | [Stanford, California] |
| Publisher | [Stanford University] |
| Copyright date | 2018; ©2018 |
| Publication date | 2018; 2018 |
| Issuance | monographic |
| Language | English |
Creators/Contributors
| Author | Everhart, Camille Latrice Marie |
|---|---|
| Degree supervisor | Kenny, Thomas William |
| Thesis advisor | Kenny, Thomas William |
| Thesis advisor | Goodson, Kenneth E, 1967- |
| Thesis advisor | Prinz, F. B |
| Degree committee member | Goodson, Kenneth E, 1967- |
| Degree committee member | Prinz, F. B |
| Associated with | Stanford University, Department of Mechanical Engineering. |
Subjects
| Genre | Theses |
|---|---|
| Genre | Text |
Bibliographic information
| Statement of responsibility | Camille Latrice Marie Everhart. |
|---|---|
| Note | Submitted to the Department of Mechanical Engineering. |
| Thesis | Thesis Ph.D. Stanford University 2018. |
| Location | electronic resource |
Access conditions
- Copyright
- © 2018 by Camille Latrice Marie Everhart
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