Interface and stress engineering in germanium metal-oxide-semiconductor field-effect-transistors for high performance application
Abstract/Contents
- Abstract
- Germanium has been attracting great interests as a high mobility channel material for MOSFETs to replace silicon in LSI chips. Germanium also has advantages over any other high mobility material, such as high compatibility to Silicon LSI technologies, low temperature process which enable 3DIC integration with low thermal budget. In order to realize high performance Ge MOS integration in future technology nodes, device and process issues have to be thoroughly addressed and investigated. In this work, first, the property of metal/Ge contact was studied. Since Ge suffers from very strong Fermi-level pinning near its valence band, n-type metal/Ge contact causes high contact resistance whatever workfunction metal is used. New technique, which is insertion of ultrathin insulator between metal and Ge, was proposed and Fermi-level depinning was experimentally demonstrated. In the second part, radical oxidation was investigated for GeO2 growth for highly reliable interface gate dielectric in high-k/Ge gate stack. Although Ge does not have chemically stable native oxide unlike Si, GeO2 has been regarded as a promising interface gate dielectric with high-k dielectric capping. High density radical oxidation enables very low temperature oxidation and provides high quality GeO2 with low interface states. In the third part, the effects of stress in Ge NMOSFETs were studied. Stress engineering has been playing a key role in the current high performance Si LSI technologies and it can also enhance device performance of Ge MOSFETs. Mobility enhancement was experimentally achieved by applying uniaxial stress to Ge NMOSFETs and performance limit of Ge NMOSFET with uniaxial stress was also theoretically examined. It is clarified that stress engineering is effective in future technology nodes.
Description
| Type of resource | text |
|---|---|
| Form | electronic; electronic resource; remote |
| Extent | 1 online resource. |
| Copyright date | 2010 |
| Publication date | 2009, c2010; 2009 |
| Issuance | monographic |
| Language | English |
Creators/Contributors
| Associated with | Kobayashi, Masaharu |
|---|---|
| Associated with | Stanford University, Department of Electrical Engineering |
| Primary advisor | Nishi, Yoshio, 1940- |
| Thesis advisor | Nishi, Yoshio, 1940- |
| Thesis advisor | Saraswat, Krishna |
| Thesis advisor | Wong, Hon-Sum Philip, 1959- |
| Advisor | Saraswat, Krishna |
| Advisor | Wong, Hon-Sum Philip, 1959- |
Subjects
| Genre | Theses |
|---|
Bibliographic information
| Statement of responsibility | Masaharu Kobayashi. |
|---|---|
| Note | Submitted to the Department of Electrical Engineering. |
| Thesis | Thesis (Ph.D.)--Stanford University, 2010. |
| Location | electronic resource |
Access conditions
- Copyright
- © 2010 by Masaharu Kobayashi
- License
- This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).
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