Phase change memory : device physics, scaling and neuromorphic application

Placeholder Show Content

Abstract/Contents

Abstract
Phase Change Memory (PCM) is one of the most promising candidates for future non-volatile memory technologies to meet the challenges facing the scaling limits of Flash memory and also address the problem of the increasing performance gap between the main memory and the hard disk. A number of high-capacity PCM chips have been demonstrated recently, showing the potential of PCM to be used in solid-state storage applications. A continued effort is however needed to understand the scalability and switching physics of these materials so as to optimize them for low switching energy, higher speed, and better reliability. The focus of this thesis is two-fold (a) to develop device structures and experimental methodologies to study the physics and scalability of PCM and (b) explore the use of PCM beyond conventional non-volatile memory applications. We have developed an ultrafast characterization methodology to study the unconventional kinetics of phase change process that happens at higher temperatures. We have achieved this by integrating a nano-scale heating element with a vertical PCM device that can be used to precisely control the temperature at the phase change layer over a large temperature range and in very short time scales. We have studied the scalability of PCM devices down to a single-digit nm using solution processed PCM nanoparticles and using carbon nanotubes as the bottom electrode. In addition to the electrode scaling, we have also investigated the thickness scaling of phase change materials using a novel structure called as an Additional Top Electrode (ATE) PCM cell to probe directly in to the trap states that are involved in the electrical conduction process in the amorphous phase. Finally this thesis also explores the use of PCM devices as a nanoscale electronic synapse for neuromorophic applications by exploiting the gradual resistance change nature of PCM devices.

Description

Type of resource text
Form electronic; electronic resource; remote
Extent 1 online resource.
Publication date 2014
Issuance monographic
Language English

Creators/Contributors

Associated with Jeyasingh, Rakesh Gnana David
Associated with Stanford University, Department of Electrical Engineering
Primary advisor Wong, Hon-Sum Philip, 1959-
Thesis advisor Wong, Hon-Sum Philip, 1959-
Thesis advisor Asheghi, Mehdi
Thesis advisor Pop, Eric
Advisor Asheghi, Mehdi
Advisor Pop, Eric

Subjects

Genre Theses

Bibliographic information

Statement of responsibility Rakesh Gnana David Jeyasingh.
Note Submitted to the Department of Electrical Engineering.
Thesis Thesis (Ph.D.)--Stanford University, 2014.
Location https://purl.stanford.edu/vh328kj9007

Access conditions

Copyright
© 2014 by Rakesh Gnanadavid Jeyasingh
License
This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).

Also listed in

Loading usage metrics...