Understanding of NiO-based unipolar resistive switching from first principle simulations to macroscopic models
Abstract/Contents
- Abstract
- As NAND Flash memory technology is facing challenging issues such as electronic coupling between adjacent cells and high coupling of the control gate with floating gate in scaling down to and beyond 16nm technology node, new functional devices or materials has been explored to continue consecutive development of memory technology beyond 16nm technology node. One of the new emerging non-volatile memories is resistance change random access memory(ReRAM) possibly meeting the requirements to replace NAND Flash; i.e., low cost, simple structure, promising 8nm technology node, low power dissipation, high endurance, possible integration in crossbar arrays in 3D on top of silicon base CMOS ICs. In ReRAM, understanding the switching mechanism was very complicated because there have been many different phenomena co-existing under circumstances when ultimate electrical stress is applied. One of them, oxidation/reduction of transition metals is generally accepted to results in the unipolar switching. In this switching mode, both thermal and chemical processes are associated with the effect of electric field. For clearer understanding of mechanism of the unipolar switching, defect states in NiO are investigated, which is closely related to electrical conductivity of the transition metal-based resistive switching materials. Study on feasible "ON" and "OFF" states in atomic scale gave an insight into atomic structure of conductive filament, role of oxygen (or oxygen vacancies) and its migration. With these first principle modeling results, a quantitative model for reset/retention and filament formation was proposed. Experimental results for reduction of reset current and long retention time of RON by inserting interfacial layer between a metal electrode and resistive switching material can be explained based on the quantitative model.
Description
| Type of resource | text |
|---|---|
| Form | electronic; electronic resource; remote |
| Extent | 1 online resource. |
| Publication date | 2011 |
| Issuance | monographic |
| Language | English |
Creators/Contributors
| Associated with | Lee, Hyung Dong |
|---|---|
| Associated with | Stanford University, Department of Electrical Engineering |
| Primary advisor | Nishi, Yoshio, 1940- |
| Primary advisor | Wong, Hon-Sum Philip, 1959- |
| Thesis advisor | Nishi, Yoshio, 1940- |
| Thesis advisor | Wong, Hon-Sum Philip, 1959- |
| Thesis advisor | McIntyre, Paul Cameron |
| Advisor | McIntyre, Paul Cameron |
Subjects
| Genre | Theses |
|---|
Bibliographic information
| Statement of responsibility | Hyung Dong Lee. |
|---|---|
| Note | Submitted to the Department of Electrical Engineering. |
| Thesis | Thesis (Ph.D.)--Stanford University, 2011. |
| Location | electronic resource |
Access conditions
- Copyright
- © 2011 by Hyung Dong Lee
- License
- This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).
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