Mapping local disorder in graphene nanostructures

<a href="https://embed.stanford.edu/iframe/?url=https%3A%2F%2Fpurl.stanford.edu%2Ftk231fn6335" class="su-underline">Show Content</a>

Abstract/Contents

Abstract: Graphene has attracted substantial interest due to its relativistic band structure, ease of deposition, and almost ideal two-dimensional nature. While very high mobilities (even at room temperature) have been reported for graphene, its exposed nature as a single atomic layer of carbon makes it prone to disorder induced by processing steps during fabrication and other environmental conditions. In particular at low densities or small length scales, this disorder can dominate the properties of graphene. As a means of probing this disorder, I present scanning gate measurements of graphene constrictions with evidence of disorder related phenomena in transport. I also discuss means to minimize the disorder in graphene such as using boron nitride as an alternative substrate as well as a newly developed method for removing processing based organic contaminants.

Type of resource	text
Form	electronic; electronic resource; remote
Extent	1 online resource.
Publication date	2013
Issuance	monographic
Language	English

Associated with	Garcia, Andrei Gustavo Fidelis
Associated with	Stanford University, Department of Applied Physics.
Primary advisor	Goldhaber-Gordon, David, 1972-
Primary advisor	Moler, Kathryn A
Thesis advisor	Goldhaber-Gordon, David, 1972-
Thesis advisor	Moler, Kathryn A
Thesis advisor	Reed, Evan J
Advisor	Reed, Evan J

Genre	Theses

Statement of responsibility	Andrei Gustavo Fidelis Garcia.
Note	Submitted to the Department of Applied Physics.
Thesis	Thesis (Ph.D.)--Stanford University, 2013.
Location	electronic resource

License: This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).

View in SearchWorks

Loading usage metrics...