The effect of interfaces on phase change memory switching

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Abstract/Contents

Abstract
With faster read and write speeds than NAND Flash and higher densities than DRAM, emerging storage class memories (SCMs) are an exciting new addition to the modern storage/memory hierarchy. Additionally, SCMs show significant promise in helping solve the computing bottleneck, commonly known as the "memory wall, " where computation speed is limited by memory rather than logic. Among the emerging SCMs, phase change memory has been the first to "emerge" with commercial products, such as Intel and Micron's 3D XPoint, now being available to consumers. PCM relies on a resistive storage material that can be reversibly switched through Joule heating in crystallization and melt-quench processes. However, due to the thermal nature of PCM's switching, achieving energy efficient writing is challenging. In an effort to alleviate this problem, we take an interface focused approach starting with finite element modeling. From modeling, we determine that significant current and energy benefits can be achieved by increasing both the thermal and electrical resistivity of the interface between the confined electrode and the phase change material. To realize these benefits, we fabricate devices with thin TiN interfacial layers in order to increase the electrical contact resistance. Unfortunately, this approach is met with limited success so we next move on to using two-dimensional (2D) materials, a class of atomically thin materials that allows us to reach the limits of interface engineering. After fabricating devices with two of these materials, graphene and molybdenum disulfide, we find that the latter shows a 40% reduction in the current required to reset.

Description

Type of resource text
Form electronic resource; remote; computer; online resource
Extent 1 online resource.
Place California
Place [Stanford, California]
Publisher [Stanford University]
Copyright date 2019; ©2019
Publication date 2019; 2019
Issuance monographic
Language English

Creators/Contributors

Author Neumann, Christopher Michael
Degree supervisor Wong, Hon-Sum Philip, 1959-
Thesis advisor Wong, Hon-Sum Philip, 1959-
Thesis advisor Pop, Eric
Thesis advisor Saraswat, Krishna
Degree committee member Pop, Eric
Degree committee member Saraswat, Krishna
Associated with Stanford University, Department of Electrical Engineering

Subjects

Genre Theses
Genre Text

Bibliographic information

Statement of responsibility Christopher Michael Neumann.
Note Submitted to the Department of Electrical Engineering.
Thesis Thesis Ph.D. Stanford University 2019.
Location https://purl.stanford.edu/rq703nq8223

Access conditions

Copyright
© 2019 by Christopher Michael Neumann
License
This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).

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