Transition metal dichalcogenides for next-generation photovoltaics
Abstract/Contents
- Abstract
- Conventional silicon solar cells dominate the photovoltaics market with a market share of about 95% due to their low-cost manufacturing and reasonable power conversion efficiency. However, the low optical absorption coefficient and brittle nature of silicon lead to degraded performance in ultrathin, flexible silicon solar cells and therefore prevent their broader usage in next-generation photovoltaic applications demanding high specific power (power per weight) and flexibility, for example in aerospace, transportation, architecture and self-powered wearable and implantable electronics. In addition, for widespread adoption of solar energy, new materials need to be integrated on silicon to form tandem solar cells with higher efficiency, lower cost per Watt and therefore higher affordability. Semiconducting transition metal dichalcogenides (TMDs) are promising for flexible high-specific-power photovoltaics and for silicon-based tandem solar cells, due to their ultrahigh optical absorption coefficients, desirable band gaps, self-passivated surfaces, high stability and lifetime, biocompatibility, eco-friendliness, and compatibility with existing nanoelectronic fabrication processes. However, challenges such as Fermi-level pinning at the metal contact-TMD interface and the inapplicability of traditional doping schemes have prevented most TMD solar cells from exceeding 2% power conversion efficiency. In addition, fabrication on flexible substrates tends to contaminate or damage TMD interfaces, further reducing performance. In this work, we investigate the promise and challenges of TMDs as next-generation photovoltaic materials and provide novel and scalable solutions for their challenges, leading to record high performance on par with prevailing thin-film solar technologies.
Description
Type of resource | text |
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Form | electronic resource; remote; computer; online resource |
Extent | 1 online resource. |
Place | California |
Place | [Stanford, California] |
Publisher | [Stanford University] |
Copyright date | 2021; ©2021 |
Publication date | 2021; 2021 |
Issuance | monographic |
Language | English |
Creators/Contributors
Author | Nassiri Nazif, Koosha |
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Degree supervisor | Saraswat, Krishna |
Thesis advisor | Saraswat, Krishna |
Thesis advisor | Chowdhury, Srabanti |
Thesis advisor | Pop, Eric |
Degree committee member | Chowdhury, Srabanti |
Degree committee member | Pop, Eric |
Associated with | Stanford University, Department of Electrical Engineering |
Subjects
Genre | Theses |
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Genre | Text |
Bibliographic information
Statement of responsibility | Koosha Nassiri Nazif. |
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Note | Submitted to the Department of Electrical Engineering. |
Thesis | Thesis Ph.D. Stanford University 2021. |
Location | https://purl.stanford.edu/qt991qr7507 |
Access conditions
- Copyright
- © 2021 by Koosha Nassiri Nazif
- License
- This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).
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