Low resistance contacts to n-type germanium

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Abstract/Contents

Abstract: The scaling of conventional silicon transistors faces several obstacles including the need to introduce materials such as germanium which have higher carrier mobilities. Several challenges need to be addressed in these new materials systems. In the case of germanium, contact resistance to n-type Ge is particularly problematic. This thesis presents two approaches to address this issue. The first is the use of metal-insulator-semiconductor contacts, whereby inserting a thin insulator between the metal and semiconductor can reduce the barrier height and reduce contact resistance. Tunneling resistance and series resistance effects are studied experimentally and theoretically. The second approach is the use of germanide contacts in conjunction with high doping techniques. Low contact resistances are obtained due to the high dopant activation level and dopant segregation effects.

Type of resource	text
Form	electronic; electronic resource; remote
Extent	1 online resource.
Publication date	2013
Issuance	monographic
Language	English

Associated with	Lin, Jui-Yen Jason
Associated with	Stanford University, Department of Electrical Engineering.
Primary advisor	Saraswat, Krishna
Thesis advisor	Saraswat, Krishna
Thesis advisor	Harris, J. S. (James Stewart), 1942-
Thesis advisor	Nishi, Yoshio, 1940-
Advisor	Harris, J. S. (James Stewart), 1942-
Advisor	Nishi, Yoshio, 1940-

Genre	Theses

Statement of responsibility	Jui-Yen Jason Lin.
Note	Submitted to the Department of Electrical Engineering.
Thesis	Thesis (Ph.D.)--Stanford University, 2013.
Location	electronic resource

License: This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).

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