Supplementary information to "Picosecond electric-field-induced threshold switching in phase-change materials," P. Zalden et al., Phys. Rev. Lett., 117, 067601 (2016).

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Abstract/Contents

Abstract
Many chalcogenide glasses undergo a breakdown in electronic resistance above a critical field strength. Known as threshold switching, this mechanism enables field-induced crystallization in emerging phase-change memory. Purely electronic as well as crystal nucleation assisted models have been employed to explain the electronic breakdown. Here, picosecond electric pulses are used to excite amorphous Ag4In3Sb67Te26. Field-dependent reversible changes in conductivity and pulse-driven crystallization are observed. The present results show that threshold switching can take place within the electric pulse on subpicosecond time scales—faster than crystals can nucleate. This supports purely electronic models of threshold switching and reveals potential applications as an ultrafast electronic switch.

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Type of resource software, multimedia
Date created August 5, 2016

Creators/Contributors

Author Zalden, Peter
Author Shu, Michael
Author Lindenberg, Aaron

Subjects

Subject Phase-change materials
Subject terahertz
Subject ultrafast
Subject Department of Materials Science and Engineering
Genre Dataset
Genre Article

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Preferred Citation
Zalden, Peter and Shu, Michael and Lindenberg, Aaron. (2016). Supplementary information to "Picosecond electric-field-induced threshold switching in phase-change materials," P. Zalden et al., Phys. Rev. Lett., 117, 067601 (2016). Stanford Digital Repository. Available at: http://purl.stanford.edu/pt520ct0371

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