Germanium-tin : a material and technology for group-IV photonics integration on silicon
Abstract/Contents
- Abstract
- The germanium-tin (GeSn) alloy system is a highly engineerable, Group-IV material system that has the potential to yield a useful direct bandgap, making it a desirable material for developing light emitters and other photonic devices. Furthermore, its Group-IV nature makes it electronically compatible with silicon and is important for ubiquitous integration into current silicon-based chips. In this dissertation, we explore several properties, features, design, and integration of GeSn alloys on silicon for photonics. Heterostructure devices with GeSn/Ge are developed in quantum-well microdisk resonators and quantum-well light-emitting diodes emitting beyond 2-[mu] m wavelength. Designs, considerations, and strategies towards developing GeSn-based lasers are presented and discussed.
Description
| Type of resource | text |
|---|---|
| Form | electronic; electronic resource; remote |
| Extent | 1 online resource. |
| Publication date | 2014 |
| Issuance | monographic |
| Language | English |
Creators/Contributors
| Associated with | Chen, Robert |
|---|---|
| Associated with | Stanford University, Department of Electrical Engineering. |
| Primary advisor | Harris, J. S. (James Stewart), 1942- |
| Thesis advisor | Harris, J. S. (James Stewart), 1942- |
| Thesis advisor | Saraswat, Krishna |
| Thesis advisor | Vuckovic, Jelena |
| Advisor | Saraswat, Krishna |
| Advisor | Vuckovic, Jelena |
Subjects
| Genre | Theses |
|---|
Bibliographic information
| Statement of responsibility | Robert Chen. |
|---|---|
| Note | Submitted to the Department of Electrical Engineering. |
| Thesis | Thesis (Ph.D.)--Stanford University, 2014. |
| Location | electronic resource |
Access conditions
- Copyright
- © 2014 by Robert Chen
- License
- This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).
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