Stanford Memory Trends
Abstract/Contents
- Abstract
- The Stanford Memory Trends set of tables is a compilation of various memory characteristics for RRAM, PCM, and CBRAM. These tables include most of the reported works in the IEDM, Symp. VLSI, and ISSCC from 2001 to today. Additionally, the tables highlight exceptional / best-known values for the write current, switching times, endurance, HRS/LRS ratios, and more. Additional trends are available from the data such as the energy consumed versus cell dimensions.
Description
| Type of resource | software, multimedia |
|---|---|
| Date created | November 11, 2015 |
Creators/Contributors
| Primary advisor | Wong, H.-S. Philip |
|---|---|
| Author | Ahn, Chiyui |
| Author | Cao, Ji |
| Author | Chen, Hong-Yu |
| Author | Fong, Scott Warren |
| Author | Jiang, Zizhen |
| Author | Neumann, Chris |
| Author | Qin, Shengjun |
| Author | Sohn, Joon |
| Author | Wu, Yi |
| Author | Yu, Shimeng |
| Author | Zheng, Xin |
| Author | Okabe, Kye |
Subjects
| Subject | Stanford |
|---|---|
| Subject | Electrical Engineering |
| Subject | Memory Devices |
| Subject | Memory Trends |
| Genre | Dataset |
Bibliographic information
Access conditions
- Use and reproduction
- User agrees that, where applicable, content will not be used to identify or to otherwise infringe the privacy or confidentiality rights of individuals. Content distributed via the Stanford Digital Repository may be subject to additional license and use restrictions applied by the depositor.
Preferred citation
- Preferred Citation
- H.-S. P. Wong, C. Ahn, J. Cao, H.-Y. Chen, S. W. Fong, Z. Jiang, C. Neumann, K. Okabe, S. Qin, J. Sohn, Y. Wu, S. Yu,and X. Zheng, “Stanford Memory Trends,” https://nano.stanford.edu/stanford-memory-trends.
Collection
Stanford Research Data
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- Contact
- swfong@stanford.edu
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