The high frequency optimization of the wide bandgap power devices

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Abstract/Contents

Abstract
The development and commercialization of wide-bandgap power semiconductors enable new opportunities in the applications that extend the switching frequency of power conversion systems from hundreds of kilohertz to the multi-MHz range. The increasing switching frequency can reduce the energy storage requirements of the passive elements, leading to higher power densities (which reduces size) or even eliminating magnetic cores (which reduces weight) for the inductors in the power converters. Candidates like gallium nitride (GaN) and silicon carbide (SiC) devices lead this evolution with excellent electrical properties like high critical fields and thermal conductivity. Prior literature has characterized numerous commercial GaN and SiC devices and discovered significant large-signal off-state Coss charge-voltage hysteresis (namely, Coss loss). Unfortunately, the loss is not currently documented in the datasheet or modeled in manufacturers' SPICE models, which imposes challenges on circuit designers since it significantly degrades the efficiency and performance of power converters. This thesis addresses the issues of Coss loss in GaN and SiC power devices from the characterization, loss trends, root locations and causes, and optimization guidelines using circuit techniques and TCAD simulations.

Description

Type of resource text
Form electronic resource; remote; computer; online resource
Extent 1 online resource.
Place California
Place [Stanford, California]
Publisher [Stanford University]
Copyright date 2023; ©2023
Publication date 2023; 2023
Issuance monographic
Language English

Creators/Contributors

Author Zhuang, Jia
Degree supervisor Rivas-Davila, Juan
Thesis advisor Rivas-Davila, Juan
Thesis advisor Chowdhury, Srabanti
Thesis advisor Plummer, James D
Degree committee member Chowdhury, Srabanti
Degree committee member Plummer, James D
Associated with Stanford University, School of Engineering
Associated with Stanford University, Department of Electrical Engineering

Subjects

Genre Theses
Genre Text

Bibliographic information

Statement of responsibility Jia Zhuang.
Note Submitted to the Department of Electrical Engineering.
Thesis Thesis Ph.D. Stanford University 2023.
Location https://purl.stanford.edu/ms258jn8078

Access conditions

Copyright
© 2023 by Jia Zhuang

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