Rapid single-crystalline III-V optoelectronics by pulsed laser crystal splitting

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III-V semiconductors are important electronic materials. We split single-crystalline III-V thin films from their single-crystalline growth substrates using standard lattice-matched III-V epitaxy and unfocused Nd:YAG laser pulses. We collaborate with the National Renewable Energy Laboratory and produce high-efficiency III-V photovoltaics in new ways. The devices are the first of their kind and the crystal ejection process offers tremendous opportunities


Type of resource text
Form electronic resource; remote; computer; online resource
Extent 1 online resource
Place California
Place [Stanford, California]
Publisher [Stanford University]
Copyright date 2020; ©2020
Publication date 2020; 2020
Issuance monographic
Language English


Author Reeves, Benjamin Ancel
Degree supervisor Clemens, B. M. (Bruce M.)
Thesis advisor Clemens, B. M. (Bruce M.)
Thesis advisor Lindenberg, Aaron Michael
Thesis advisor Salleo, Alberto
Degree committee member Lindenberg, Aaron Michael
Degree committee member Salleo, Alberto
Associated with Stanford University, Department of Materials Science and Engineering


Genre Theses
Genre Text

Bibliographic information

Statement of responsibility Benjamin Ancel Reeves
Note Submitted to the Department of Materials Science and Engineering
Thesis Thesis Ph.D. Stanford University 2020
Location electronic resource

Access conditions

© 2020 by Benjamin Ancel Reeves
This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).

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