Rapid single-crystalline III-V optoelectronics by pulsed laser crystal splitting
Abstract/Contents
- Abstract
- III-V semiconductors are important electronic materials. We split single-crystalline III-V thin films from their single-crystalline growth substrates using standard lattice-matched III-V epitaxy and unfocused Nd:YAG laser pulses. We collaborate with the National Renewable Energy Laboratory and produce high-efficiency III-V photovoltaics in new ways. The devices are the first of their kind and the crystal ejection process offers tremendous opportunities
Description
| Type of resource | text |
|---|---|
| Form | electronic resource; remote; computer; online resource |
| Extent | 1 online resource |
| Place | California |
| Place | [Stanford, California] |
| Publisher | [Stanford University] |
| Copyright date | 2020; ©2020 |
| Publication date | 2020; 2020 |
| Issuance | monographic |
| Language | English |
Creators/Contributors
| Author | Reeves, Benjamin Ancel |
|---|---|
| Degree supervisor | Clemens, B. M. (Bruce M.) |
| Thesis advisor | Clemens, B. M. (Bruce M.) |
| Thesis advisor | Lindenberg, Aaron Michael |
| Thesis advisor | Salleo, Alberto |
| Degree committee member | Lindenberg, Aaron Michael |
| Degree committee member | Salleo, Alberto |
| Associated with | Stanford University, Department of Materials Science and Engineering |
Subjects
| Genre | Theses |
|---|---|
| Genre | Text |
Bibliographic information
| Statement of responsibility | Benjamin Ancel Reeves |
|---|---|
| Note | Submitted to the Department of Materials Science and Engineering |
| Thesis | Thesis Ph.D. Stanford University 2020 |
| Location | electronic resource |
Access conditions
- Copyright
- © 2020 by Benjamin Ancel Reeves
- License
- This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).
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