Mechanisms of resistance switching in various transition metal oxides
Abstract/Contents
- Abstract
- Several materials, especially transition metal oxides, undergo abrupt changes in resistance, known as resistance switching, driven by various external stimuli such as temperature, electric field, etc. through several mechanisms such as Mott transition, Peierls transition, etc. Such a change in resistance and other intrinsic material properties have enabled many applications, specifically, in an upcoming computer memory technology called Resistive Random Access Memory (RRAM), where information is stored in distinct resistance states of the material, owing to the phase-transition. In this work, we understand mechanisms of phase transitions in two oxide systems, namely, VO2 and TaOx+TiOx. We use multiple advanced in-situ spectro-microscopy techniques to understand the switching process driven by different stimuli including uniform material temperature and local Joule-heating.
Description
| Type of resource | text |
|---|---|
| Form | electronic; electronic resource; remote |
| Extent | 1 online resource. |
| Publication date | 2014 |
| Issuance | monographic |
| Language | English |
Creators/Contributors
| Associated with | Kumar, Suhas |
|---|---|
| Associated with | Stanford University, Department of Electrical Engineering. |
| Primary advisor | Nishi, Yoshio, 1940- |
| Thesis advisor | Nishi, Yoshio, 1940- |
| Thesis advisor | Brongersma, Mark L |
| Thesis advisor | Pianetta, Piero |
| Advisor | Brongersma, Mark L |
| Advisor | Pianetta, Piero |
Subjects
| Genre | Theses |
|---|
Bibliographic information
| Statement of responsibility | Suhas Kumar. |
|---|---|
| Note | Submitted to the Department of Electrical Engineering. |
| Thesis | Thesis (Ph.D.)--Stanford University, 2014. |
| Location | electronic resource |
Access conditions
- Copyright
- © 2014 by Suhas Kumar
- License
- This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).
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