Code for RRAM Compact Model

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Abstract/Contents

Abstract
This is the Verilog-A Code for RRAM Compact Model. We develop the Verilog-A RRAM compact model taking into account the statistical variability of filament evolution. A methodology to systematically calibrate the model parameters with experimental data is developed and validated with a broad set of DC characteristics from a variety of RRAM devices such as TiOX/HfOX bilayer RRAM and HfOx RRAM with Al-doping devices. In addition to the DC switching characteristics, this model also captures the AC programing transient current behavior, conductance modulation during RESET, and SET stochastic switching under weak programming conditions. The agreement between the simulated and measured data suggests that this physics-based compact model can be used for circuit simulations to guide the analysis and optimization of various circuit and system designs involving RRAM.

Description

Type of resource software, multimedia
Date created December 2013

Creators/Contributors

Author Jiang, Zizhen
Advisor Wong, H.-S. Philip

Subjects

Subject Electrical Engineering
Subject Stanford

Bibliographic information

Related Publication Jiang, Zizhen and Yu, Shimeng and Wu, Yi and Engel, Jesse H. and Guan, Ximeng and Wong, H.-S. Philip. Verilog-A compact model for oxide-based resistive random access memory (RRAM). In IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 41-44. 2014. https://doi.org/10.1109/SISPAD.2014.6931558
Related Publication Jiang, Zizhen and Wu, Yi and Yu, Shimeng and Yang, Lin and Song, Kay and Karim, Zia and Wong, H.-S. Philip. A compact model for metal–oxide resistive random access memory with experiment verification. IEEE Transactions on Electron Devices, 63(5), pp.1884-1892, 2016
Related Publication NanoHUB Package: https://nanohub.org/publications/19/1
Related Publication Recent Progress: https://nano.stanford.edu/stanford-rram-model
Location https://purl.stanford.edu/kw653wj7896

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Preferred citation

Preferred Citation
Jiang, Zizhen and Wong, H.-S. Philip. (2013). Code for RRAM Compact Model. Stanford Digital Repository. Available at: https://purl.stanford.edu/kw653wj7896

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