Code for RRAM Compact Model
Abstract/Contents
- Abstract
- This is the Verilog-A Code for RRAM Compact Model. We develop the Verilog-A RRAM compact model taking into account the statistical variability of filament evolution. A methodology to systematically calibrate the model parameters with experimental data is developed and validated with a broad set of DC characteristics from a variety of RRAM devices such as TiOX/HfOX bilayer RRAM and HfOx RRAM with Al-doping devices. In addition to the DC switching characteristics, this model also captures the AC programing transient current behavior, conductance modulation during RESET, and SET stochastic switching under weak programming conditions. The agreement between the simulated and measured data suggests that this physics-based compact model can be used for circuit simulations to guide the analysis and optimization of various circuit and system designs involving RRAM.
Description
Type of resource | software, multimedia |
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Date created | December 2013 |
Creators/Contributors
Author | Jiang, Zizhen |
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Advisor | Wong, H.-S. Philip |
Subjects
Subject | Electrical Engineering |
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Subject | Stanford |
Bibliographic information
Related Publication | Jiang, Zizhen and Yu, Shimeng and Wu, Yi and Engel, Jesse H. and Guan, Ximeng and Wong, H.-S. Philip. Verilog-A compact model for oxide-based resistive random access memory (RRAM). In IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), pp. 41-44. 2014. https://doi.org/10.1109/SISPAD.2014.6931558 |
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Related Publication | Jiang, Zizhen and Wu, Yi and Yu, Shimeng and Yang, Lin and Song, Kay and Karim, Zia and Wong, H.-S. Philip. A compact model for metal–oxide resistive random access memory with experiment verification. IEEE Transactions on Electron Devices, 63(5), pp.1884-1892, 2016 |
Related Publication | NanoHUB Package: https://nanohub.org/publications/19/1 |
Related Publication | Recent Progress: https://nano.stanford.edu/stanford-rram-model |
Location | https://purl.stanford.edu/kw653wj7896 |
Access conditions
- Use and reproduction
- User agrees that, where applicable, content will not be used to identify or to otherwise infringe the privacy or confidentiality rights of individuals. Content distributed via the Stanford Digital Repository may be subject to additional license and use restrictions applied by the depositor.
Preferred citation
- Preferred Citation
- Jiang, Zizhen and Wong, H.-S. Philip. (2013). Code for RRAM Compact Model. Stanford Digital Repository. Available at: https://purl.stanford.edu/kw653wj7896
Collection
Stanford Research Data
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- Contact
- zizhenj@gmail.com
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