GaAs-based 1550 nm GaInNAsSb lasers

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Abstract/Contents

Abstract
Low-cost, long-wavelength light sources are indispensable for the widespread deployment of fiber-to-the-home networks. Vertical cavity surface emitting lasers (VCSELs) are ideal for these applications due to their high fiber-coupling efficiency, low power consumption, simple packaging and wafer-scale manufacturability. In particular, VCSELs emitting in the C-band (1530-1565 nm) are highly desirable given that the fiber optical loss is minimal in this wavelength range. High-performance 1550 nm InP-based VCSELs using various distributed Bragg reflector (DBR) technologies have been demonstrated, but these approaches generally require complex and extensive processing, leading to high manufacturing costs. In contrast, GaAs-based VCSELs can be processed in a simple and robust way by exploiting the superior material properties of Al(Ga)As/GaAs DBRs and the oxidation of AlAs layers for electrical and optical confinement. Dilute nitride GaInNAsSb alloys emitting in the 1200-1600 nm wavelength range can be grown coherently on GaAs substrates, enabling the realization of long wavelength GaAs-based lasers. Despite significant challenges in the growth of such highly-mismatched alloys, 1550 nm GaInNAsSb lasers with relatively low threshold current densities have been demonstrated. This dissertation describes recent progress on the development of GaInNAsSb lasers. Optimization of the growth and annealing conditions enabled a four-fold enhancement of the luminescence efficiency of GaInNAsSb quantum wells with GaNAs barriers. In addition, incorporation of GaAsP barriers significantly improved the temperature stability of the lasers. The improved quantum wells enabled the realization of the first electrically-pumped GaInNAsSb VCSELs emitting in the C-band that operate at and above room temperature.

Description

Type of resource text
Form electronic; electronic resource; remote
Extent 1 online resource.
Publication date 2013
Issuance monographic
Language English

Creators/Contributors

Associated with Sarmiento Suarez, Tomás
Associated with Stanford University, Department of Electrical Engineering.
Primary advisor Harris, J. S. (James Stewart), 1942-
Thesis advisor Harris, J. S. (James Stewart), 1942-
Thesis advisor Miller, D. A. B
Thesis advisor Vuckovic, Jelena
Advisor Miller, D. A. B
Advisor Vuckovic, Jelena

Subjects

Genre Theses

Bibliographic information

Statement of responsibility Tomás Sarmiento.
Note Submitted to the Department of Electrical Engineering.
Thesis Thesis (Ph.D.)--Stanford University, 2013.
Location electronic resource

Access conditions

Copyright
© 2013 by Tomas Sarmiento Suarez
License
This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).

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