Keyhole diffraction microscopy for semiconductor circuit inspection
Abstract/Contents
- Abstract
- Non-destructive inspection of integrated circuits requires a microscope that features high resolution (< 20 nm) and high penetration (> 0.07mm of silicon substrate), thus suggesting the use of x-ray microscopy. The advent of intense coherent sources of hard (< 1nm wavelength) x-rays has led to the study of x-ray diffraction microscopy in which the image is reconstructed from the far-field diffraction pattern. Atomic resolution is possible with this lensless approach. Because this pattern records only intensity information, additional information, e.g. the phase distribution, is needed for image reconstruction. Here this information is provided by illuminating the sample with a collimated beam of well-defined shape and thus is a form of "keyhole diffraction microscopy". The research featured computer simulations, scaled optical experiments, soft (1.4 nm) x-ray experiments and one hard x-ray experiment. Different reconstruction algorithms were compared. The hybrid input-out (HIO) algorithm followed by a few iterations using the error reduction (ER) algorithm proved to be e±cient. Dynamic support was used to improve the convergence of computation. Samples with complex-valued transmission functions were more difficult to reconstruct. The geometry and periodicity of the sample itself were found to affect the reconstruction. Illumination with asymmetric shapes (such as a triangle) sharply bounded gave the best reconstruction. The results of scaled optical experiment conducted under blind conditions (no a priori knowledge of the sample) suggest that a resolution of 10 nm should be readily achievable at an x-ray wavelength of 0.18 nm.
Description
| Type of resource | text |
|---|---|
| Form | electronic; electronic resource; remote |
| Extent | 1 online resource. |
| Copyright date | 2011 |
| Publication date | 2010, c2011; 2010 |
| Issuance | monographic |
| Language | English |
Creators/Contributors
| Associated with | Dai, Bing |
|---|---|
| Associated with | Stanford University, Department of Applied Physics |
| Primary advisor | Kasevich, Mark A |
| Primary advisor | Pease, R. (R. Fabian W.) |
| Thesis advisor | Kasevich, Mark A |
| Thesis advisor | Pease, R. (R. Fabian W.) |
| Thesis advisor | Pianetta, Piero |
| Advisor | Pianetta, Piero |
Subjects
| Genre | Theses |
|---|
Bibliographic information
| Statement of responsibility | Bing Dai. |
|---|---|
| Note | Submitted to the Department of Applied Physics. |
| Thesis | Thesis (Ph.D.)--Stanford University, 2011. |
| Location | electronic resource |
Access conditions
- Copyright
- © 2011 by Bing Dai
- License
- This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).
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