Engineering of light emission devices for integration on silicon
Abstract/Contents
- Abstract
- Silicon (Si) compatible lasers for applications in inter die and intra die optical interconnect systems and spectroscopy system have been an interesting topic for several years, but has yet to be practically demonstrated. One possible candidate material of a light source for inter die and intra die optical interconnect systems is germanium. Germanium (Ge) is compatible with Si and has a direct band gap of 0.8 eV, corresponding to the usual communication wavelength of 1550 nm. The small difference of 0.134 eV between the direct and indirect band gaps of Ge suggests the possibility of a radiative direct band gap transition. In the first part of this work, we focus on improving different aspects of Ge to reach the goal of lasing with a low threshold. The first aspect is the activated n-type dopant concentration and crystal quality, which we improve through a novel method of laser annealing, microwave annealing and co-implantation of dopants. The second aspect is the increase in the concentration of electron density in the active region through implementation of a unique electrical device design, known here as a gated microdisk resonator. The third aspect is the improvement in optical property by reducing the radiative recombination in the indirect valley through the fabrication of a photonic crystal. For spectroscopy applications, one candidate is thulium (Tm). We can dope the dielectrics with Tm3+ ions and pumped it at 1570nm taking advantage of light sources already used in telecommunications. This laser can be tuned to lase in the range from 1650nm to 2000nm depending on the matrix and the pump. This wavelength range can also be used in (light detection and ranging) LIDAR systems, gas sensing systems, spectroscopy on a chip and even to extend the range of wavelengths for telecommunications. In this second part of the work, we demonstrate photoluminescence with Tm-doped dielectrics and also show a method to optimize the microdisks for lasing with Tm.
Description
| Type of resource | text |
|---|---|
| Form | electronic; electronic resource; remote |
| Extent | 1 online resource. |
| Publication date | 2016 |
| Issuance | monographic |
| Language | English |
Creators/Contributors
| Associated with | Lee, Lennon Yao Ting |
|---|---|
| Associated with | Stanford University, Department of Electrical Engineering. |
| Primary advisor | Nishi, Yoshio, 1940- |
| Thesis advisor | Nishi, Yoshio, 1940- |
| Thesis advisor | Saraswat, Krishna |
| Thesis advisor | Vuckovic, Jelena |
| Advisor | Saraswat, Krishna |
| Advisor | Vuckovic, Jelena |
Subjects
| Genre | Theses |
|---|
Bibliographic information
| Statement of responsibility | Lennon Yao Ting Lee. |
|---|---|
| Note | Submitted to the Department of Electrical Engineering. |
| Thesis | Thesis (Ph.D.)--Stanford University, 2016. |
| Location | electronic resource |
Access conditions
- Copyright
- © 2016 by Yao Ting Lennon Lee
- License
- This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).
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