Rapid melt growth technique for III-V integration on Si substrates
Abstract/Contents
- Abstract
- The aggressive scaling of transistors driven by Moore's law is expected to continue in the future. Technological innovations at the system and process levels may facilitate the scaling to some extent. However, the physical limitation of Si materials is likely to put an end to Moore's law scaling. Novel materials with superior carrier transport properties are actively being studied to extend Moore's law. Among all the novel materials, III-V materials are one of the most promising candidates to replace Si due to their outstanding carrier transport properties. The heterogeneous integration of III-V materials on Si substrates not only enables the future scaling of electronic devices, but also offers a few other advantages, for instance, vertical integration of different functionalities on the same silicon-based CMOS platform, freedom of materials selection and possibilities of bandgap engineering. However, there are technological challenges to grow compound materials on silicon substrates due to the large lattice mismatch. In this thesis, a promising technique called Rapid Melt Growth is studied for III-V integration on Si substrates. A background of III-V integration on Si substrates is introduced first. Then a detailed study of the growth mechanism during RMG is performed. Three major nucleation scenarios are discussed: 3D homogeneous nucleation, 3D heterogeneous nucleation and 2D heterogeneous nucleation. The study is used to explain under what conditions the crystal growth originates from the seed region. Third, A thermal simulation is conducted to understand the thermal distribution inside the stripe during crystallization. The simulation results are then used to explain twinning crystals growth. Fourth, an analytical model is derived to predict the elemental segregation during the RMG process. This model fits the short stripe where complete mixing conditions apply. Fifth, two diffusion processes in RMG are investigated: solid state diffusion and liquid state diffusion. The effect of both diffusion processes on the crystal quality is discussed. Finally, a solution is proposed to prevent the liquid state diffusion of the Si seed region into the III-V stripe. The process optimization of this solution is described in detail. The best EBSD results of InAs RMG on Si substrates using this solution are presented. Both electrical and optical measurements are done on the as-grown InAs RMG materials to test the crystal quality.
Description
| Type of resource | text |
|---|---|
| Form | electronic; electronic resource; remote |
| Extent | 1 online resource. |
| Publication date | 2016 |
| Issuance | monographic |
| Language | English |
Creators/Contributors
| Associated with | Pitner, Xue Bai |
|---|---|
| Associated with | Stanford University, Department of Materials Science and Engineering. |
| Primary advisor | McIntyre, Paul Cameron |
| Primary advisor | Plummer, James L |
| Thesis advisor | McIntyre, Paul Cameron |
| Thesis advisor | Plummer, James L |
| Thesis advisor | Brongersma, Mark L |
| Advisor | Brongersma, Mark L |
Subjects
| Genre | Theses |
|---|
Bibliographic information
| Statement of responsibility | Xue Bai Pitner. |
|---|---|
| Note | Submitted to the Department of Materials Science and Engineering. |
| Thesis | Thesis (Ph.D.)--Stanford University, 2016. |
| Location | electronic resource |
Access conditions
- Copyright
- © 2016 by Xue B Pitner
- License
- This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).
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