Resistive random access memory device scaling and integration with complementary metal-oxide-semiconductor
Abstract/Contents
- Abstract
- Resistive random access memory (RRAM) is a promising candidate to meet future density and power challenges. RRAM has fast switching speed, low programming power, and many other advantages. However, there are still a few imperative issues to be tackled before RRAM can compete with, and eventually, replace flash or other memory technologies. This dissertation explores two issues: 1) RRAM scaling potential below 10 nm and 2) integration of RRAM with complementary metal-oxide-semiconductor (CMOS), which leads to the first threedimensional (3D) field programmable gate array (FPGA) based on RRAM.
Description
| Type of resource | text |
|---|---|
| Form | electronic; electronic resource; remote |
| Extent | 1 online resource. |
| Publication date | 2013 |
| Issuance | monographic |
| Language | English |
Creators/Contributors
| Associated with | Zhang, Zhiping |
|---|---|
| Associated with | Stanford University, Department of Electrical Engineering. |
| Primary advisor | Wong, S. Simon |
| Thesis advisor | Wong, S. Simon |
| Thesis advisor | Nishi, Yoshio, 1940- |
| Thesis advisor | Wong, Hon-Sum Philip, 1959- |
| Advisor | Nishi, Yoshio, 1940- |
| Advisor | Wong, Hon-Sum Philip, 1959- |
Subjects
| Genre | Theses |
|---|
Bibliographic information
| Statement of responsibility | Zhiping Zhang. |
|---|---|
| Note | Submitted to the Department of Electrical Engineering. |
| Thesis | Thesis (Ph.D.)--Stanford University, 2013. |
| Location | electronic resource |
Access conditions
- Copyright
- © 2013 by Zhiping Zhang
- License
- This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).
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