Exploring Moiré Transition Metal Dichalcogenide Heterostructures

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Abstract/Contents

Abstract
In recent years moiré transition metal dichalogenide (TMD) heterostructures have been studied extensively, realizing a tunable platform to study electronic correlations. In this thesis, we describe efforts to develop new moiré TMD device architectures to study and tune interacting ground states and characterize them using electrical transport measurements. We focus in particular on a novel geometry, using bilayer graphene as a sensing layer to measure the chemical potential of a WS2/WSe2 heterobilayer. We observe interaction-driven gaps in the TMD bilayer in agreement with previous work upon both electron and hole doping. We also discuss preliminary attempts to tune the TMD superlattice potential and Coulomb screening in situ, though these remain inconclusive so far. Our work highlights some of the experimental challenges involved in fabricating moiré TMD devices, and we end with an outlook on improving future devices.

Description

Type of resource text
Publication date May 17, 2023; May 2023

Creators/Contributors

Author Wang, David ORCiD icon https://orcid.org/0009-0000-4316-1144 (unverified)
Thesis advisor Feldman, Benjamin ORCiD icon https://orcid.org/0000-0002-4962-0548 (unverified)
Thesis advisor Goldhaber-Gordon, David ORCiD icon https://orcid.org/0000-0001-8549-0560 (unverified)
Degree granting institution Stanford University
Department Department of Physics

Subjects

Subject Transition metal dichalcogenide
Subject Moiré heterostructure
Subject Heterobilayer
Subject WS2/WSe2
Subject Superlattices
Genre Text
Genre Thesis

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This work is licensed under a Creative Commons Attribution Non Commercial 4.0 International license (CC BY-NC).

Preferred citation

Preferred citation
Wang, D. (2023). Exploring Moiré Transition Metal Dichalcogenide Heterostructures. Stanford Digital Repository. Available at https://purl.stanford.edu/kq565vk7202. https://doi.org/10.25740/kq565vk7202.

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Undergraduate Theses, Department of Physics

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