Impact of hydrogen on the forming and switching behaviors of Pr(0.7)Ca(0.3)MnO(3) thin films for resistance change random access memory
Abstract/Contents
- Abstract
- The continued scaling of NAND Flash memory technology is facing significant physical, electrical, and reliability challenges. Beyond the 16 nm technology node, the issues associated with these challenges may offset or even counteract the benefits of increased density. An increased appetite for high-capacity memory devices motivates the need to investigate new functional devices and materials for next-generation memory technology. One promising solution is Resistance-change Random Access Memory (RRAM), which offers the advantages of low cost, simple device structure, low power write and erase, high-speed switching, and integration into monolithic memory. Despite these advantages, some barriers must be overcome. Resistance-change films typically require "electroforming" - a one-time voltage application that induces a change in the film conductivity - before resistance switching can be accessed. Moreover, RRAM devices often display great variation, which partly arises from the lack of thorough understanding of the resistance switching mechanism. Filament formation through oxygen vacancies is typically cited as the underlying mechanism; however, the finer details remain hotly contested. Understanding these details may provide insight into overcoming the aforementioned hurdles. In this work, hydrogen contamination of RF-sputtered Pr(0.7)Ca(0.3)MnO(3) (PCMO) thin films is investigated as a reason for large device-to-device variation. Significant hydrogen is shown to enter the films during standard deposition and processing steps. Its effects on electroforming, switching, dielectric loss, and optical absorption are presented. These measurements are considered together to devise a comprehensive model for hydrogen-assisted electroforming and switching in PCMO.
Description
| Type of resource | text |
|---|---|
| Form | electronic; electronic resource; remote |
| Extent | 1 online resource. |
| Publication date | 2011 |
| Issuance | monographic |
| Language | English |
Creators/Contributors
| Associated with | Tendulkar, Mihir Prakash |
|---|---|
| Associated with | Stanford University, Department of Applied Physics |
| Primary advisor | Harris, J. S. (James Stewart), 1942- |
| Primary advisor | Nishi, Yoshio, 1940- |
| Thesis advisor | Harris, J. S. (James Stewart), 1942- |
| Thesis advisor | Nishi, Yoshio, 1940- |
| Thesis advisor | Wong, Hon-Sum Philip, 1959- |
| Advisor | Wong, Hon-Sum Philip, 1959- |
Subjects
| Genre | Theses |
|---|
Bibliographic information
| Statement of responsibility | Mihir Prakash Tendulkar. |
|---|---|
| Note | Submitted to the Department of Applied Physics. |
| Thesis | Ph.D. Stanford University 2011 |
| Location | electronic resource |
Access conditions
- Copyright
- © 2011 by Mihir Prakash Tendulkar
- License
- This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).
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