Characterization of hydrogen-terminated diamond devices for extreme environment applications
- This thesis presents diamond as a promising platform for devices and electronics for harsh environment operation. However, the theme of this work is not to present wildly innovative device architectures, but rather, to gain an understanding of the properties that substantiate the promise of new materials for devices. Namely, for the case of diamond, the experimental electrical performance is thus far limited. To realize diamond's full potential, it is therefore essential to illuminate the fundamental barriers that inhibit its performance. This thesis is dedicated to this understanding. In the ﬁrst part of this thesis, a fabrication process for hydrogen-terminated diamond (H:diamond) devices is presented. Moreover, a theoretical model is developed to understand the hole mobility of the p-type conductive channel on the diamond surface (2DHG). The model is used to ﬁt to experimental measurements to demonstrate that multiple mobility-limiting mechanisms exist for the diamond surface conductive channel, and one of these mechanisms are widely unaccounted for in literature. Next, H:diamond-based ﬁeld eﬀect transistor operation is demonstrated. The transfer characteristics exhibit high ON/OFF ratios and good sub-threshold slopes. Further, the oxide quality is robust, as shown by the capacitance measurements, as well as the high-temperature Hall-eﬀect measurements up to 700 K. The resistance to radiation was demonstrated by irradiating the diamond substrates to 2 MeV proton irradiation at multiple ﬂuences. It was shown that negative charge build-up is generated in the oxide, which degrades the mobility and enhances the 2DHG accumulation (thus increasing the sheet density). In order to illuminate all of the mobility-limiting mechanisms as induced via irradiation, unpassivated H:diamond samples were also irradiated. It was shown that the conductivity also decreased. It is reasoned that lattice damage is unlikely the cause of this degradation. Rather, the degradation is likely caused by the proton-induced ionization, which can dissociate the C-H surface dipoles. These results further support the conclusion that surface disorder related to the C-H dipoles contributes signiﬁcantly to the degraded 2DHG mobility. Finally, this thesis contributes to a well-known phenomenon related to the irradiation-induced annealing. This is in the context of 3C-silicon carbide (SiC), which, also has a diamond crystal structure. When defective 3C-SiC is irradiated with high-energy ions, annealing is observed. Similar eﬀects are observed in other polytypes, such as 4H-SiC. It is demonstrated that when such ionization events occur in the vicinity of high electric ﬁelds, the annealing eﬀect can be en-hanced. This provides avenues for applications requiring low-temperature and localized annealing solutions.
|Type of resource
|electronic resource; remote; computer; online resource
|1 online resource.
|Peterson, Ricardo Andre
|Degree committee member
|Degree committee member
|Stanford University, Department of Electrical Engineering
|Statement of responsibility
|Ricardo Andre Peterson.
|Submitted to the Department of Electrical Engineering.
|Thesis Ph.D. Stanford University 2020.
- © 2020 by Ricardo Andre Peterson
- This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).
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