Ge/SiGe quantum well devices for optical interconnects

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Abstract/Contents

Abstract
Increasing processing power has been at the heart of technological boom witnessed in the past few decades. However, the communication delay of electrical interconnects poses a fundamental limit to future improvements. On-chip optical interconnects are an alternative solution to allow for continued advancements in processing power. This thesis explores the potential of Ge/SiGe quantum well devices as a candidate for an on-chip optical interconnect system. The Ge and SiGe material system is particularly promising for optical interconnects because these materials are compatible with Si CMOS technology. Our work demonstrates that these devices can perform as light emitters, modulators and detectors—the most important components in an optical interconnect system. Furthermore, we developed vertically coupled waveguide Ge quantum well devices and discuss their performance as well as our efforts to integrate these devices into a functioning optical interconnect system.

Description

Type of resource text
Form electronic; electronic resource; remote
Extent 1 online resource.
Publication date 2014
Issuance monographic
Language English

Creators/Contributors

Associated with Fei, Edward T
Associated with Stanford University, Department of Electrical Engineering.
Primary advisor Harris, J. S. (James Stewart), 1942-
Thesis advisor Harris, J. S. (James Stewart), 1942-
Thesis advisor Kamins, Theodore I
Thesis advisor Miller, D. A. B
Advisor Kamins, Theodore I
Advisor Miller, D. A. B

Subjects

Genre Theses

Bibliographic information

Statement of responsibility Edward T. Fei.
Note Submitted to the Department of Electrical Engineering.
Thesis Thesis (Ph.D.)--Stanford University, 2014.
Location electronic resource

Access conditions

Copyright
© 2014 by Edward Tien-Lee Fei
License
This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).

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