Improving contacts and defect characterization toward industry-ready 2D semiconductors

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Abstract/Contents

Abstract
For six decades, silicon technology has driven advances in computing; however, silicon is approaching its fundamental scaling limits. In contrast, two-dimensional (2D) semiconductors offer excellent electrical properties in sub-nanometer thin channels, and they are compatible with 3D heterogeneous integration. This could enable ultra-dense logic and memory stacked vertically on a chip, unlocking vast new possibilities in computing advances. While 2D materials show great promise, their parasitic contact resistance and defect densities are well-known limitations for their electrical performance. In this thesis, I will describe the problem of contact resistance to 2D semiconductors and uncover our advances in understanding the interaction between metal contacts and the 2D semiconductor MoS2. I will also present a statistical analysis on the effect of specific metal properties on contact resistance with MoS2. I will then show how we have utilized these findings to demonstrate record-low contact resistances to monolayer MoS2. Next, I will address MoS2 defects, how they affect transistor performance, and how to quantify their densities quickly and non-destructively using Raman spectroscopy, which enables 100x higher throughput for material optimization. Combined, these advances provide fundamental insights into 2D semiconductor optimization, while bringing them closer to industrial adoption.

Description

Type of resource text
Form electronic resource; remote; computer; online resource
Extent 1 online resource.
Place California
Place [Stanford, California]
Publisher [Stanford University]
Copyright date 2022; ©2022
Publication date 2022; 2022
Issuance monographic
Language English

Creators/Contributors

Author Schauble, Kirstin
Degree supervisor Pop, Eric
Thesis advisor Pop, Eric
Thesis advisor Salleo, Alberto
Thesis advisor Saraswat, Krishna
Degree committee member Salleo, Alberto
Degree committee member Saraswat, Krishna
Associated with Stanford University, Department of Electrical Engineering

Subjects

Genre Theses
Genre Text

Bibliographic information

Statement of responsibility Kirstin Elizabeth Schauble.
Note Submitted to the Department of Electrical Engineering.
Thesis Thesis Ph.D. Stanford University 2022.
Location https://purl.stanford.edu/hg087cg7836

Access conditions

Copyright
© 2022 by Kirstin Schauble
License
This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).

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