Monolithic integration of germanium-on-insulator platform on silicon substrate and its applications to devices

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Abstract/Contents

Abstract
Due to its higher carrier mobilities and lower optical bandgap, germanium (Ge) has been considered as an attractive material for high performance CMOS and optical applications. High performance electrical and optical devices have already been demonstrated on a germanium-on-insulator (GOI) platform. To employ high performance GOI devices side by side with a silicon (Si) CMOS circuitry, monolithic integration of GOI platform on Si is needed. In this work, a lateral overgrowth technique for the monolithic integration of GOI on Si is demonstrated. Silicon dioxide (SiO2) is used as a growth mask. Ge is over-laterally grown from the growth windows defined in the SiO2 to form the GOI platform. The technique gives a high quality GOI platform. Based on the lateral overgrowth approach, lateral p-i-n photodiode with excellent diode characteristics and high optical response is demonstrated. On the lateral overgrowth GOI, p-i-n and metal-semiconductor-metal (MSM) photodiodes are demonstrated. Ge MSM photodiodes typically show high dark current, due to the strong metal Fermi level pinning. To suppress the high dark current, photodiode with metal-insulator-semiconductor (MIS) contact is demonstrated using titanium oxide as a Fermi level de-pinning layer. The MIS contact allows transport of electrons freely but blocks holes to reduce dark current.

Description

Type of resource text
Form electronic; electronic resource; remote
Extent 1 online resource.
Publication date 2016
Issuance monographic
Language English

Creators/Contributors

Associated with Nam, Ju Hyung
Associated with Stanford University, Department of Electrical Engineering.
Primary advisor Saraswat, Krishna
Thesis advisor Saraswat, Krishna
Thesis advisor Harris, J. S. (James Stewart), 1942-
Thesis advisor Wong, Hon-Sum Philip, 1959-
Advisor Harris, J. S. (James Stewart), 1942-
Advisor Wong, Hon-Sum Philip, 1959-

Subjects

Genre Theses

Bibliographic information

Statement of responsibility Ju Hyung Nam.
Note Submitted to the Department of Electrical Engineering.
Thesis Thesis (Ph.D.)--Stanford University, 2016.
Location electronic resource

Access conditions

Copyright
© 2016 by Ju Hyung Nam
License
This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).

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