Identifying and Characterizing Topological Insulators Using Scanning Potentiometry
Abstract/Contents
- Abstract
- We present an examination of the use of scanning potentiometry in characterizing and possibly identifying topological insulators. Modeling conduction in a topological insulator with Laplace’s equation, we show through several simulations that there are significant differences between the potential on the surface of a topological insulator and a normal material. We offer a narrative of our attempt at performing scanning potentiometry on a sample of Bismuth Selenide and demonstrate the efficacy of our scanning potentiometer.
Description
Type of resource | text |
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Date created | 2011 |
Creators/Contributors
Author | Marantan, Andrew |
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Department | Stanford University, Department of Physics |
Primary advisor | Beasley, Malcolm |
Advisor | Cabrera, Blas |
Subjects
Subject | scanning potentiometry |
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Subject | topological insulator |
Genre | Thesis |
Bibliographic information
Access conditions
- Use and reproduction
- User agrees that, where applicable, content will not be used to identify or to otherwise infringe the privacy or confidentiality rights of individuals. Content distributed via the Stanford Digital Repository may be subject to additional license and use restrictions applied by the depositor.
- License
- This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).
Preferred citation
- Preferred Citation
- Marantan, Andrew (2011). Identifying and characterizing topological insulators using scanning potentiometry. Stanford Digital Repository. Available at http://purl.stanford.edu/gp361hz5082
Collection
Undergraduate Theses, Department of Physics
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- Contact
- skota@stanford.edu
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