GaAs based long wavelength vertical cavity surface emitting lasers
Abstract/Contents
- Abstract
- Long wavelength GaAs-based vertical-cavity surfaceemitting lasers that operate in continuous wave mode at and above room temperature are demonstrated.The VCSELs employ a dilute-nitride GaInNAsSb/GaNAs multiple quantum well active region, two n-doped Al- GaAs/GaAs distributed Bragg reflectors and a tunnel junction. Typical devices have threshold current densities of 2 kA/cm2. Single mode operation was achieved from a 7 mm aperture device. The devices have 3 dB frequencies above 4 GHz.
Description
| Type of resource | text |
|---|---|
| Form | electronic resource; remote; computer; online resource |
| Extent | 1 online resource. |
| Place | California |
| Place | [Stanford, California] |
| Publisher | [Stanford University] |
| Copyright date | 2019; ©2019 |
| Publication date | 2019; 2019 |
| Issuance | monographic |
| Language | English |
Creators/Contributors
| Author | Zhao, Li |
|---|---|
| Degree supervisor | Cui, Yi, 1976- |
| Degree supervisor | Harris, J. S. (James Stewart), 1942- |
| Thesis advisor | Cui, Yi, 1976- |
| Thesis advisor | Harris, J. S. (James Stewart), 1942- |
| Thesis advisor | Brongersma, Mark L |
| Degree committee member | Brongersma, Mark L |
| Associated with | Stanford University, Department of Materials Science and Engineering. |
Subjects
| Genre | Theses |
|---|---|
| Genre | Text |
Bibliographic information
| Statement of responsibility | Li Zhao. |
|---|---|
| Note | Submitted to the Department of Materials Science and Engineering. |
| Thesis | Thesis Ph.D. Stanford University 2019. |
| Location | electronic resource |
Access conditions
- Copyright
- © 2019 by Li Zhao
- License
- This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).
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