Thin film applications for energy storage
Abstract/Contents
- Abstract
- Renewable technology, a solution to many global warming problems, has been developed in recent decades and progressing rapidly; however, its global adoption rate is still limited mainly because of energy storage sources. To replace fossil fuels, we need to improve the energy and power densities of alternative storage technologies to be competitive. By employing thin film techniques, particularly based on atomic layer deposition (ALD), one can shorten the transport length for improved kinetics and better ability to withstand higher applied electric fields for energy storage devices. First, in this work, a nanoscale protective ALD coating layer for the Li-ion battery cathode to enhance battery durability is introduced. The coating needs not only protect the battery against numerous degradation mechanisms but also exhibit sufficiently high ionic and electronic conductivities. Many ALD-deposited metal oxide films, including Ti, Nb, W, V, Zr, and Li, are explored and ranked according to their conductivities, resulting in Li-V-O coating with minimal Nb-doping as the best candidate. Secondly, an energy storage device with nanoscale thin film in a heterostructure form is often subjected to high applied current or voltage, leading to high thermal loading, which can cause device failure due to thermal expansion mismatch. Therefore, we introduce atomic force microscopy with the harmonic Joules heating method to probe thermal expansion coefficients in nanoscale thin films. We apply such techniques with a varying aspect ratio pillar micropattern to reveal anisotropy in thermal expansion in poly(methyl methacrylate) for the first time. Finally, we explore a new kind of energy storage/transport device by adopting a metal-insulator-semiconductor (MIS) architecture. Guided by density functional theory, the ALD dielectric with high breakdown strength and high aspect ratio structure enable the application of high electric fields, which, in turn, may induce topological electronic states. We observed unconventional current-voltage behavior, including current spikes much larger than the capacitive current at low voltages and an inverse scaling of maximum current densities with area, indicating high energy density behavior. These effects could only be seen in MIS capacitors and not in metal-insulator-metal (normal) capacitors. In addition, simulations indicated that classical bulk and surface leakage currents, as well as tunneling currents, cannot explain the observed behavior. These efforts demonstrate how thin film applications may be crucial for future energy storage technologies.
Description
| Type of resource | text |
|---|---|
| Form | electronic resource; remote; computer; online resource |
| Extent | 1 online resource. |
| Place | California |
| Place | [Stanford, California] |
| Publisher | [Stanford University] |
| Copyright date | 2023; ©2023 |
| Publication date | 2023; 2023 |
| Issuance | monographic |
| Language | English |
Creators/Contributors
| Author | Chaikasetsin, Settasit |
|---|---|
| Degree supervisor | Prinz, F. B |
| Thesis advisor | Prinz, F. B |
| Thesis advisor | Jornada, Felipe |
| Thesis advisor | Santiago, Juan G |
| Degree committee member | Jornada, Felipe |
| Degree committee member | Santiago, Juan G |
| Associated with | Stanford University, School of Engineering |
| Associated with | Stanford University, Department of Mechanical Engineering |
Subjects
| Genre | Theses |
|---|---|
| Genre | Text |
Bibliographic information
| Statement of responsibility | Settasit Chaikasetsin. |
|---|---|
| Note | Submitted to the Department of Mechanical Engineering. |
| Thesis | Thesis Ph.D. Stanford University 2023. |
| Location | https://purl.stanford.edu/fz397tz3488 |
Access conditions
- Copyright
- © 2023 by Settasit Chaikasetsin
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