Pre-Print Supplementary Information: "Design Principles for Maximizing Photovoltage in Metal-Oxide-Protected Water-Splitting Photonanodes" published Oct 2015 in Nature Materials

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Abstract/Contents

Abstract: Metal oxide protection layers for photoanodes may enable the development of large-scale solar fuel and solar chemical synthesis, but the poor photovoltages often reported so far will severely limit their performance. Here we report a novel observation of photovoltage loss associated with a charge extraction barrier imposed by the protection layer, and, by eliminating it, achieve photovoltages as high as 630 mV, the maximum reported so far for water-splitting silicon photoanodes. The loss mechanism is systematically probed in metal–insulator–semiconductor Schottky junction cells compared to buried junction pn cells, revealing the need to maintain a characteristic hole density at the semiconductor/insulator interface. A leaky-capacitor model related to the dielectric properties of the protective oxide explains this loss, achieving excellent agreement with the data. From these ﬁndings, we formulate design principles for simultaneous optimization of built-in ﬁeld, interface quality, and hole extraction to maximize the photovoltage of oxide-protected water-splitting anodes.

Type of resource	software, multimedia
Date created	October 2015

Related item	Title Nature Materials Article
Location	https://purl.stanford.edu/fs398dg4506

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