Tunneling contacts for novel semiconductor devices
Abstract/Contents
- Abstract
- While the continued scaling of transistors faces severe limitations, novel devices incorporating new materials, new transport mechanisms and new state variables are emerging as a strong contender for future logic and memory. This thesis describes the modeling and simulation of three such devices. The first of these is the metal-insulator-semiconductor (MIS) contact to achieve low contact resistance. A contact resistance simulator for MIS structures is developed and quantitative predictions are made of the achievable contact resistance using different insulator materials. $\mathrm{TiO}2$ is predicted to be a suitable interface material. The second device is the spin MOSFET using ferromagnetic source and drain contacts. An efficient framework is developed to simulate spin transport in semiconductors coupled with a tunneling model for spin injecting contacts. The important effects of electric fields, the voltage dependence of magnetoresistance (MR) and the effect of parameters such as tunnel oxide thickness, semiconductor channel length and doping density on MR are investigated. The third device is the magnetic tunnel junction which uses spin selective MgO tunnel barriers. An extended Huckel theory (EHT) atomistic simulator coupled with non-equilibrium Green's function (NEGF) formalism for transport is implemented. Through these EHT-NEGF simulations the reduction of magnetoresistance due to Fermi level pinning is demonstrated. An approximate approach for the simulation of CoFe alloy electrodes is developed.
Description
| Type of resource | text |
|---|---|
| Form | electronic; electronic resource; remote |
| Extent | 1 online resource. |
| Publication date | 2012 |
| Issuance | monographic |
| Language | English |
Creators/Contributors
| Associated with | Roy, Arunanshu Mohan |
|---|---|
| Associated with | Stanford University, Department of Electrical Engineering |
| Primary advisor | Saraswat, Krishna |
| Thesis advisor | Saraswat, Krishna |
| Thesis advisor | Nikonov, Dmitri, 1969- |
| Thesis advisor | Nishi, Yoshio, 1940- |
| Advisor | Nikonov, Dmitri, 1969- |
| Advisor | Nishi, Yoshio, 1940- |
Subjects
| Genre | Theses |
|---|
Bibliographic information
| Statement of responsibility | Arunanshu Mohan Roy. |
|---|---|
| Note | Submitted to the Department of Electrical Engineering. |
| Thesis | Thesis (Ph.D.)--Stanford University, 2012. |
| Location | electronic resource |
Access conditions
- Copyright
- © 2012 by Arunanshu Mohan Roy
- License
- This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).
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