Suspended aluminum gallium nitride/gallium nitride-on-silicon microstructures for high-temperature-tolerant micro-electromechanical systems

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Abstract/Contents

Abstract
In this Ph.D. work, advances have been made in the development of AlGaN/GaN-on-Si as a material system for high-temperature-tolerant micro electromechanical systems (MEMS). Firstly, a unique micro-fabrication process for making fully-suspended MEMS devices from AlGaN/GaN-on-Si wafers has been developed. In addition, electrical and micro-structural behaviors of Ti/Al/Pt/Au Ohmic metallization for AlGaN/GaN devices at high temperatures in air has been studied for the first time in literature. It has been shown that the contact resistance of the Ti/Al/Pt/Au Ohmic metallization remained very stable (< 3% variations) at 600°C in air for 10 hours after the initial "burn-in". Moreover, the degradation phenomena and mechanisms of the two-dimensional electron gas (2DEG) in the AlGaN/GaN heterostructures at 600°C in both oxidizing and inert ambient conditions have been examined. It has been discovered that oxygen plays a critical role in suppressing the strain relaxation of the AlGaN layer. Furthermore, suspended AlGaN/GaN MEMS ultraviolet (UV) photodetectors with in-situ heating capability have been designed, micro-fabricated and tested. The in-situ heating is used to overcome the chronic problem suffered by GaN-based optical detectors -- long decay transients (hours to days) of the photocurrent after the UV illumination source has been removed. The decay times of AlGaN/GaN UV photodetectors have been reduced from ~39 hours to ~24 seconds using the suspended AlGaN/GaN device architecture. The results demonstrate that AlGaN/GaN-on-Si, when interfaced with appropriate metallization and dielectrics, is a promising material platform for manufacturing high-temperature-tolerant MEMS.

Description

Type of resource text
Form electronic; electronic resource; remote
Extent 1 online resource.
Publication date 2017
Issuance monographic
Language English

Creators/Contributors

Associated with Hou, Minmin
Associated with Stanford University, Department of Electrical Engineering
Primary advisor Senesky, Debbie
Thesis advisor Senesky, Debbie
Thesis advisor Howe, Roger Thomas
Thesis advisor Pop, Eric
Advisor Howe, Roger Thomas
Advisor Pop, Eric

Subjects

Genre Theses

Bibliographic information

Statement of responsibility Minmin Hou.
Note Submitted to the Department of Electrical Engineering.
Thesis Thesis (Ph.D.)--Stanford University, 2017.
Location https://purl.stanford.edu/fh967pd5097

Access conditions

Copyright
© 2017 by Minmin Hou
License
This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).

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