Quantum simulation using hybrid metal-semiconductor islands

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Abstract/Contents

Abstract
Advancements in our control and understanding of quantum systems promise dramatic change in technology, potentially affecting fields of computation, sensing, and even power transmission. These grand possibilities are driven by new phenomena that emerge from strong quantum mechanical interactions between electrons in a material. One limitation to realizing these breakthroughs is that much of the exotic behavior present in quantum materials occur in conditions not suitable for practical applications, for example, very low temperatures or high pressures. Understanding why these novel properties emerge may provide insight into overcoming such limitations. One avenue to better our understanding is quantum simulation, in which a highly controllable experimental system is used to directly implement the physics of these quantum materials. In this thesis we build on a new approach to quantum simulation, using hybrid metal-semiconductor island nanostructures. The hybrid structure combines the advantages of both metal and semiconductor nanostructures -- sites that behave uniformly and couplings that are highly tunable. Each island can act as a single lattice site, with electrons that may interact with other lattice sites or a surrounding bath of conduction electrons. However, before scaling to lattices where the physics of bulk materials can be replicated, a crucial step is understanding how two such islands interact with each other. To probe the inter-island interaction, we build and study a two-island device, and find that the inter-island interaction arises from a Kondo-like screening of charge states acting as a pseudospin. When each island is also coupled to a single lead via a Kondo interaction, the resulting competition leads to a quantum critical point. We find that this is well described by a double charge Kondo model, and our transport measurements well match numerical renormalization group calculations. In particular, we study how critical behavior is destroyed following a particular universal scaling form when detuning from charge degeneracy, where criticality occurs.

Description

Type of resource text
Form electronic resource; remote; computer; online resource
Extent 1 online resource.
Place California
Place [Stanford, California]
Publisher [Stanford University]
Copyright date 2023; ©2023
Publication date 2023; 2023
Issuance monographic
Language English

Creators/Contributors

Author Pouse, Winston
Degree supervisor Goldhaber-Gordon, David, 1972-
Thesis advisor Goldhaber-Gordon, David, 1972-
Thesis advisor Feldman, Ben, 1980-
Thesis advisor Kastner, Marc A
Degree committee member Feldman, Ben, 1980-
Degree committee member Kastner, Marc A
Associated with Stanford University, School of Humanities and Sciences
Associated with Stanford University, Department of Applied Physics

Subjects

Genre Theses
Genre Text

Bibliographic information

Statement of responsibility Winston Pouse.
Note Submitted to the Department of Applied Physics.
Thesis Thesis Ph.D. Stanford University 2023.
Location https://purl.stanford.edu/dz997qb2486

Access conditions

Copyright
© 2023 by Winston Pouse
License
This work is licensed under a Creative Commons Attribution Non Commercial 3.0 Unported license (CC BY-NC).

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